ptma210404fl Infineon Technologies Corporation, ptma210404fl Datasheet

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ptma210404fl

Manufacturer Part Number
ptma210404fl
Description
Dual Wideband Rf Ldmos Power Amplifier
Manufacturer
Infineon Technologies Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PTMA210404FL
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Confidential, Limited Internal Distribution
Dual Wideband RF LDMOS Power Amplifier
40 W, 1800 – 2200 MHz
Description
The PTMA210404FL integrates two wideband, 20-watt, 2-stage
LDMOS integrated amplifiers into an open-cavity, ceramic package.
It is designed for use in cellular amplifier applications in the 1800-
2200 MHz frequency band. Manufactured with Infineon's advanced
LDMOS process, this amplifier offers excellent thermal performance
and superior reliability.
RF Characteristics
Six-carrier TD-SCDMA Measurements in Doherty Circuit
V
@ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Alternate Channel Power Ratio
All published data at T
Preliminary Data Sheet
ESD: Electrostatic discharge sensitive device—observe handling precautions!
DD
= 28 V, I
35
30
25
20
15
10
5
1800
Broadband Performance of Each Side
DQ1A
V
Side A
Side B
DD
= 28 V, I
= I
1900
DQ1B
CASE
DQ1
Frequency (MHz)
= 55 mA, I
= 25°C unless otherwise indicated
= 60 mA, I
2000
DQ2B
DQ2
Return Loss
2100
Gain
= 120 mA
= 110 mA, V
2200
0
-5
-10
-15
-20
-25
-30
GS2A
1 of 11
= 1.05 V, P
(tested in Infineon test fixture)
OUT
Symbol
PTMA210404FL*
Package H-34248-12
Features
ACPR
G
Alt
Designed for wide RF and modulation bandwidths
and low memory effects
Typical channel isolation = 26 dB
Typical single channel performance CW, 2018
MHz, 28 V
- Output power at P-1dB = 20 W
- Linear Gain = 30.5 dB
- Efficiency = 54%
Typical Doherty performance with six-carrier
TD-SCDMA signal, V
mA, I
- Average output power = 10 W
- Linear Gain = 27 dB
- Efficiency = 35%
- ACLR1 = –33 dBc
- ACLR2 = –34 dBc
Capable of handling 10:1 VSWR @ 28 V, 50 W
(CW) output power
Integrated ESD protection
High-performance, thermally-enhanced packages,
Pb-free and RoHS compliant, with low-gold plating
= 10 W average, ƒ = 2018 MHz, input PAR = 9.8 dB
ps
D
Preliminary PTMA210404FL
*See Infineon distributor for future availability.
DQ2B
= 110 mA, V
Min
26
33
DD
Typ
–33
–34
27
35
G2A
= 28 V, I
= 1.06 V, ƒ = 2018 MHz
Rev. 03, 2009-06-05
Max
DQ1A
–30
–31
= I
DQ1B
Unit
dBc
dBc
dB
%
= 55

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ptma210404fl Summary of contents

Page 1

... Dual Wideband RF LDMOS Power Amplifier 40 W, 1800 – 2200 MHz Description The PTMA210404FL integrates two wideband, 20-watt, 2-stage LDMOS integrated amplifiers into an open-cavity, ceramic package designed for use in cellular amplifier applications in the 1800- 2200 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this amplifier offers excellent thermal performance and superior reliability ...

Page 2

... 0 120 mA, DS DQ1 I = 110 mA DQ2 Symbol Stage 1 Stage 2 Stage 1 Stage Preliminary PTMA210404FL Min Typ Max G — 0.30 — — — –0.4 –1.0 Min Typ Max 65 — — I — — 1.0 DSS I — ...

Page 3

... Confidential, Limited Internal Distribution Ordering Information Type and Version Package Outline PTMA210404FL* V1 H-34248-12 PTMA210404FL V1 R250* H-34248-12 Typical Performance (data taken in a production test fixture) CW Performance of Each Side mA DQ1 32 Gain 31 30 Efficiency Output Power (dBm) * See Infineon distributor for future availability ...

Page 4

... MHz 2140 MHz 10 -45 2170 MHz - Preliminary PTMA210404FL Two-tone Performance at Various I Single Side, ƒ = 2018 MHz mA Varying DD DQ1 DQ2 -30 -35 -40 -45 -50 -55 - Average Output Power (dBm) ...

Page 5

... DQ2 = 1.07 V GS2 2000 2050 2100 Preliminary PTMA210404FL CW Performance Doherty Circuit, Carrier mA DQ1 DQ2 Peaking mA DQ1 GS2 Efficiency Gain 2010 MHz 2018 MHz 2025 MHz ...

Page 6

... Preliminary Data Sheet Gate – Source Voltage vs. Temperature = 120 mA DQ2 = 1.07 V GS2 2.70 60 2.60 50 2.50 40 2.40 Gain 30 2.30 20 2. Preliminary PTMA210404FL mA 120 mA DD DQ1 DQ2 I DQ2 Slope = –1.168 mV/°C I DQ1 Slope = –1.435 mV/°C -30 - Temperature (°C) Rev. 03, 2009-06-05 90 ...

Page 7

... Confidential, Limited Internal Distribution Broadband Circuit Impedance Frequency Z Source MHz R 2000 74.7 25.2 2010 75.6 24.9 2020 76.5 24.5 2030 77.4 24.1 2040 78.3 23.7 Z Load 2040 MHz 2000 MHz Preliminary Data Sheet Z Load 4.2 -2.2 4.2 -2.1 4.2 -2.0 4.2 -1.9 4.1 -1 Preliminary PTMA210404FL D Z Source Z Load G S 2000 MHz 2040 MHz Z Source Rev. 03, 2009-06- ...

Page 8

... Confidential, Limited Internal Distribution Application Examples Single - ended In In Quadrature Combined In Preliminary Data Sheet Preliminary PTMA210404FL Doherty Out In Out Push-pull In Out 90º Out Out Rev. 03, 2009-06-05 ...

Page 9

... Primary dimensions are mm. Alternate dimensions are inches. All tolerances ± 0.127 [.005] unless specified otherwise. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. Gold plating thickness: Gold top layer: 0.25 micron [10 microinch] (max Preliminary PTMA210404FL R0.51 +.381 2X 5.71 -.127 [ [.225] R.020 +.015 - ...

Page 10

... G2B Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Preliminary Data Sheet Preliminary PTMA210404FL Package H-34248-12 Pinout Source: Package Flange ...

Page 11

... PTMA210404FL V1 Confidential, Limited Internal Distribution Revision History: 2009-06-05 2009-04-01 Preliminary Data Sheet Previous Version: Page Subjects (major changes since last revision Update product information and tables Update graphs and add new graphs 6 Update impedance data 7 Add application example 9 Update pinout diagram ...

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