hmc607 Hittite Microwave Corporation, hmc607 Datasheet

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hmc607

Manufacturer Part Number
hmc607
Description
High Isolation Spdt Switch Chip, Dc - 15 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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HMC607
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4 - 32
4
Functional Diagram
Electrical Specifi cations,
Typical Applications
The HMC607 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Space Systems
• Test Instrumentation
Parameter
Insertion Loss
Isolation*
Return Loss
Return Loss RF1, RF2
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
*Isolation data taken with probe on the die
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
T
A
v01.0807
= +25° C, With 0/-5V Control, 50 Ohm System
Order On-line at www.hittite.com
“On State”
“Off State”
DC - 10 GHz
DC - 15 GHz
DC - 10 GHz
DC - 15 GHz
DC - 15 GHz
DC - 15 GHz
0.5 - 15 GHz
0.5 - 15 GHz
DC - 15 GHz
Features
High Isolation: >50 dB @ 10 GHz
Low Insertion Loss: 1.4 dB Typical @ 6.0 GHz
Non-Refl ective Design
Die Size: 2.05 x 1.04 x 0.1 mm
General Description
The HMC607 is a broadband high isolation non-
refl ective GaAs MESFET SPDT MMIC chip. Covering
DC to 15 GHz, the switch features >55 dB isolation at
lower frequencies and >45 dB at higher frequencies.
The switch operates using complementary negative
control voltage logic lines of -5/0V and requires no
bias supply.
DC - 6 GHz
DC - 6 GHz
DC - 6 GHz
DC - 6 GHz
Frequency
GaAs MMIC HIGH ISOLATION
SPDT SWITCH, DC - 15 GHz
Min.
55
50
45
21
44
Typ.
1.4
2.7
1.7
60
65
55
17
11
13
17
26
49
3
5
HMC607
Max.
2.5
1.7
3.4
Units
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
ns

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hmc607 Summary of contents

Page 1

... Low Insertion Loss: 1.4 dB Typical @ 6.0 GHz Non-Refl ective Design Die Size: 2.05 x 1.04 x 0.1 mm General Description The HMC607 is a broadband high isolation non- refl ective GaAs MESFET SPDT MMIC chip. Covering GHz, the switch features >55 dB isolation at lower frequencies and > higher frequencies. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply ...

Page 2

... FREQUENCY (GHz) 0.1 and 1 dB Input Compression Point FREQUENCY (GHz) +25 C + FREQUENCY (GHz) HMC607 RF1 RF2 0.1 dB Compression Point 1 dB Compression Point ...

Page 3

... Signal Path State A A RFC to RF1 RFC to RF2 Low High ON OFF High Low OFF ON Low High OFF OFF High Low 0/-5V Order On-line at www.hittite.com HMC607 Bias Condition 0 to -0. Max. - Typ Typ. ). ...

Page 4

... BACKSIDE METAL IS GROUND 6. BOND PAD METALIZATION: GOLD 7. NO CONNECTION REQUIRED FOR UNLABLED BOND PADS. 8. OVERALL DIE SIZE ±.002” Description See truth table and control voltage table. Alternate A & B control pads provided. Die bottom must be connected to RF ground. HMC607 4 Interface Schematic ...

Page 5

... Assembly Diagram 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 v01.0807 GaAs MMIC HIGH ISOLATION SPDT SWITCH GHz Order On-line at www.hittite.com HMC607 ...

Page 6

... All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC607 GaAs MMIC HIGH ISOLATION SPDT SWITCH GHz 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0 ...

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