hs-22620rh Intersil Corporation, hs-22620rh Datasheet - Page 4

• Manufacturer Part Number: hs-22620rh
• Description: Rad-hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier
• Manufacturer: Intersil Corporation

Die Characteristics
DIE DIMENSIONS:
INTERFACE MATERIALS:
Glassivation:
Top Metallization:
Substrate:
Backside Finish:
Metallization Mask Layout
145 mils x 116 mils x 19 mils 1 mil
3670 m x 2950 m x 483 m 25.4 m
Type: Nitride (S13N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
Nitride Thickness: 3.5k
Type: Al, 1% Cu
Thickness: 14k
Bipolar Bonded Wafer (EBHF)
Silicon
Å
+INA (3)
-INA (4)
-INB (6)
+INB (7)
2k
Å
Å
Å
2k
1.5k
4
Å
Å
BAL1B
BAL1A
(8)
(2)
BAL2B
BAL2A
(9)
(1)
HS-22620RH
HS-22620RH
VCCA
VCCB
(18)
(10)
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
ADDITIONAL INFORMATION:
Worst Case Current Density:
Transistor Count:
Unbiased Silicon
(WEB pad provided for substrate tie-off.)
<2 x 10
184
5
A/cm
VEEA
(17)
VEEB
(11)
2
(16) OUTA
(15) COMPA
(14) WEB
(13) COMPB
(12) OUTB