2sd2654 ROHM Co. Ltd., 2sd2654 Datasheet

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2sd2654

Manufacturer Part Number
2sd2654
Description
General Purpose Transistor 50v, 0.15a
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
General Purpose Transistor (50V, 0.15A)
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
1) High DC current gain.
2) High emitter-base voltage. (V
3) Low saturation voltage.
∗Single pulse Pw=100ms
Basic ordering unit (pleces)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Features
Absolute maximum ratings (Ta=25°C)
Packaging specifications and h
Denotes h
(Typ. V
package
Marking
Code
Type
FE
h
FE
CE(sat)
Parameter
=0.3V at I
2SD2654, 2SD2707
2SD2351, 2SD2226K
2SD2227S
2SD2707
VMT3
8000
BJ
T2L
VW
C
/I
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
B
=50mA/5mA)
2SD2654
EMT3
3000
VW
CBO
BJ
TL
Symbol
V
V
V
Tstg
=12V)
P
CBO
CEO
I
Tj
FE
EBO
C
C
2SD2351
UMT3
T106
3000
VW
BJ
−55 to +150
Limits
0.15
0.15
150
0.2
0.2
0.3
60
50
12
2SD2226K
SMT3
T146
3000
VW
BJ
A (Pulse) ∗
A (DC)
Unit
°C
°C
W
V
V
V
2SD2227S
5000
SPT
VW
TP
External dimensions (Unit : mm)
2SD2707
2SD2654
2SD2351
2SD2226K
2SD2227S
ROHM : EMT3
ROHM : EMT3
EIAJ : SC-75A
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
ROHM : SPT
EIAJ : SC-72
Each lead has same dimensions
Each lead has same dimensions
0.1Min.
0.1Min.
0.3Min.
( 1 ) ( 2 ) ( 3 )
Taping specifications
( 3 )
0.2
4
5
0.8
1.6
(3)
1.25
2.1
2.5
1.2
0.8
0.45
1.6
2.8
( 1 )
( 2 )
( 2 )
( 1 )
0.2
0.5
2
0.45
Rev.A
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Collector
(3) Base
1/3

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2sd2654 Summary of contents

Page 1

... Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features 1) High DC current gain. 2) High emitter-base voltage. (V =12V) CBO 3) Low saturation voltage. (Typ. V =0. =50mA/5mA) CE(sat Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage ...

Page 2

... Transistors Electrical characteristics (Ta = 25°C) Parameter Symbol Collector-base breakdown voltage BV Collector-emitter breakdown voltage BV Emitter-base breakdown voltage BV Collector cutoff current I Emitter cutoff current I Collector-emitter saturation voltage V CE(sat) DC current transfer ratio h Transition frequency Output capacitance Cob ∗ Measured using pulse current. ...

Page 3

... Transistors 1000 500 200 100 Ta=100°C 50 25° −25° 0.2 0 100 200 COLLECTOR CURRENT : I (mA) C Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) 1000 500 200 100 −1 − ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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