2sb1002cjtl-e Renesas Electronics Corporation., 2sb1002cjtl-e Datasheet - Page 3

• Manufacturer Part Number: 2sb1002cjtl-e
• Description: Silicon Pnp Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SB1002
Main Characteristics
Rev.2.00 Aug 10, 2005 page 3 of 5
10,000
3,000
1,000
–2.0
–1.6
–1.2
–0.8
–0.4
300
100
1.2
0.8
0.4
30
10
0
0
Maximum Collector Dissipation Curve
–1
Collector to Emitter Voltage V
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Typical Output Characteristics
–3
Collector Current I
–0.4
Collector Current
–10
50
–0.8
–30
I
B
–1.2
= 0
100
–100 –300 –1,000
C
Pulse
V
CE
(mA)
–1.6
= –2 V
CE
150
(V)
–2.0
–1,000
3,000
1,000
–100
–300
–100
–80
–60
–40
–20
300
100
–30
–10
30
10
–3
–1
0
3
–0.3
0
Collector to Emitter Voltage V
Collector to Base Voltage V
Base to Emitter Voltage V
Typical Transfer Characteristics
Collector Output Capacitance
vs. Collector to Base Voltage
Typical Output Characteristics
–1.0
V
–0.2
–2
CE
= –2 V
–3
–0.4
–4
–10
–0.1
–0.05 mA
I
B
–0.6
–6
= 0
–30 –100 –300
f = 1 MHz
I
E
= 0
–0.8
BE
–8
CB
CE
(V)
(V)
(V)
–1.0
–10