k4s280832f-ul75 Samsung Semiconductor, Inc., k4s280832f-ul75 Datasheet
k4s280832f-ul75
Related parts for k4s280832f-ul75
k4s280832f-ul75 Summary of contents
Page 1
SDRAM 128Mb F-die (x4, x8, x16) 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free * Samsung Electronics reserves the right to change products or specification without notice. (RoHS compliant) Revision 1.2 August 2004 CMOS SDRAM Rev. 1.2 August 2004 ...
Page 2
SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 1.0 (January, 2004) - First release. Revision 1.1 (May, 2004) • Added Note 5. sentense of tRDL parameter. Revision 1.2 (August, 2004) • Corrected typo. CMOS SDRAM Rev. 1.2 August 2004 ...
Page 3
... RoHS compliant GENERAL DESCRIPTION The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGcs high perfor- mance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle ...
Page 4
SDRAM 128Mb F-die (x4, x8, x16) Package Physical Dimension #54 #1 0.10 MAX 0.004 0. 0.028 #28 #27 22.62 MAX 0.891 22.22 r0.10 0.21 0.875 r0.004 0.008 +0.10 0.30 0.80 -0.05 0.004 0.0315 0.012 -0.002 54Pin TSOP ...
Page 5
SDRAM 128Mb F-die (x4, x8, x16) FUNCTIONAL BLOCK DIAGRAM Bank Select CLK ADD LCKE LRAS LCBR CLK CKE CS * Samsung Electronics reserves the right to change products or specification without notice. Data Input Register ...
Page 6
SDRAM 128Mb F-die (x4, x8, x16) PIN CONFIGURATION (Top view) x16 DQ0 DQ0 V V DDQ DDQ DQ1 N.C DQ2 DQ1 V V SSQ SSQ DQ3 N.C DQ4 DQ2 V V DDQ DDQ DQ5 N.C ...
Page 7
SDRAM 128Mb F-die (x4, x8, x16) ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if ...
Page 8
SDRAM 128Mb F-die (x4, x8, x16) DC CHARACTERISTICS (x4, x8) (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active CC2 Precharge standby current in power-down mode I PS CKE & CLK ...
Page 9
SDRAM 128Mb F-die (x4, x8, x16) DC CHARACTERISTICS (x16) (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active CC2 Precharge standby current in power-down mode I PS CKE & CLK dV ...
Page 10
SDRAM 128Mb F-die (x4, x8, x16) AC OPERATING TEST CONDITIONS Parameter Input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition 3.3V 1200: Output 50pF 870: (Fig ...
Page 11
SDRAM 128Mb F-die (x4, x8, x16) AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol CAS latency=3 CLK cycle t CC time CAS latency=2 CAS latency=3 CLK to valid t SAC output delay CAS latency=2 CAS latency=3 Output data ...
Page 12
SDRAM 128Mb F-die (x4, x8, x16) IBIS SPECIFICATION I Characteristics (Pull-up) OH 100MHz 100MHz Voltage 133MHz 133MHz Min Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197.0 ...
Page 13
SDRAM 128Mb F-die (x4, x8, x16) V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 ...
Page 14
SDRAM 128Mb F-die (x4, x8, x16) SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Exit Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge ...