mga-683p8 Avago Technologies, mga-683p8 Datasheet - Page 2

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mga-683p8

Manufacturer Part Number
mga-683p8
Description
Low Noise And High Linearity Active Bias Low Noise Amplii Er
Manufacturer
Avago Technologies
Datasheet

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Absolute Maximum Rating
Electrical Specifi cations
RF performance at T
list in Table 1 for 900 MHz matching.
Notes:
1. Measurements at 900 MHz obtained using demo board described in Figure 1.
2. OIP3 test condition: F
3. For NF data, board losses of the input have not been de-embedded.
4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
2
Symbol
V
Idd
P
P
T
T
T
MSL
Symbol
I
Gain
OIP3
NF
OP1dB
IRL
ORL
REV ISOL
dd
stg
amb
dd
max
diss
j
note for more details.
[3]
[2]
Parameter
Device Voltage,
RF output to ground
Drain Current
CW RF Input Power
(V
Total Power Dissipation
Junction Temperature
Storage Temperature
Ambient Temperature
dd
Parameter and Test Condition
Drain Current
Gain
Output Third Order Intercept Point
Output Power at 1dB Gain Compression
Input Return Loss, 50  source
Output Return Loss, 50  load
Reverse Isolation
Noise Figure
= 5.0 V, I
A
RF1
= 25° C, V
= 900 MHz, F
d
[1, 4]
[1]
= 54 mA)
T
A
=25° C
dd
= 5 V, R
RF2
[2]
= 901 MHz with input power of -10 dBm per tone.
bias
= 12 kOhm, 900 MHz, measured on demo board in Figure 5 with component
Units
V
mA
dBm
W
°C
°C
°C
Absolute Maximum
5.5
90
+20
0.495
150
-65 to 150
-40 to 85
1
Units
mA
dB
dBm
dB
dBm
dB
dB
dB
Thermal Resistance
Notes:
1. Operation of this device in excess of any of
2. Thermal resistance measured using Infra-Red
3. Power dissipation with unit turned on. Board
Thermal Resistance
(V
jc
dd
these limits may cause permanent damage.
Measurement Technique.
temperature T
for T
= 72°C/W
= 5.0 V, I
Min.
25
16.3
28.5
B
> 114° C.
dd
= 40 mA)
B
is 25° C. Derate at 13.89 mW/°C
Typ.
40.3
17.8
32.8
0.56
21.5
24
13
21
[3]
Max.
53
19.3
0.8

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