mga-684p8 Avago Technologies, mga-684p8 Datasheet - Page 2

• Manufacturer Part Number: mga-684p8
• Description: Low Noise Active Bias Low Noise Ampliier
• Manufacturer: Avago Technologies

Absolute Maximum Rating
Electrical Specifi cations
RF performance at T
list in Table 1 for 1.9 GHz matching.
Notes:
1. Measurements at 1.9 GHz obtained using demo board described in Figure 1.
2. OIP3 test condition: F
3. For NF data, board losses of the input have not been de-embedded.
4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
2
Symbol
V
V
Idd
P
P
T
T
T
Symbol
I
Gain
OIP3
NF
OP1dB
IRL
ORL
REV ISOL
dd
stg
amb
dd
in,max
diss
j
bias
note for more details.
[3]
[2]
Parameter
Device Voltage,
RF output to ground
Gate Voltage
Drain Current
CW RF Input Power
(V
Total Power Dissipation
Junction Temperature
Storage Temperature
Ambient Temperature
dd
Parameter and Test Condition
Drain Current
Gain
Output Third Order Intercept Point
Noise Figure
Output Power at 1dB Gain Compression
Input Return Loss, 50  source
Output Return Loss, 50  load
Reverse Isolation
= 5.0 V, I
A
RF1
= 25° C, V
= 1.9 GHz, F
d
[1], [4]
[1]
= 50 mA)
T
A
=25° C
dd
RF2
= 5 V, R
[2]
= 1.901 GHz with input power of -10 dBm per tone.
bias
= 6.8 kOhm, 1.9 GHz, measured on demo board in Figure 5 with component
Units
V
V
mA
dBm
W
°C
°C
°C
Absolute Maximum
5.5
0.7
90
+20
0.5
150
-65 to 150
-40 to 85
Units
mA
dB
dBm
dB
dBm
dB
dB
dB
Thermal Resistance
Notes:
1. Operation of this device in excess of any of
2. Thermal resistance measured using Infra-Red
3. Power dissipation with unit turned on. Board
Thermal Resistance
(V

jc
dd
these limits may cause permanent damage.
Measurement Technique.
temperature T
for T
= 62°C/W per channel
= 5.0 V, I
Min.
23
16.1
29
B
> 119° C.
dd
= 35 mA per channel),
B
is 25° C. Derate at 16 mW/°C
Typ.
35.2
17.6
32.4
0.56
22
21
12
30
[3]
Max.
47
19.1
0.8