mga-632p8 Avago Technologies, mga-632p8 Datasheet - Page 2

• Manufacturer Part Number: mga-632p8
• Description: Low Noise, High Linearity Active Bias Low Noise Amplifer
• Manufacturer: Avago Technologies

MGA-632P8 Absolute Maximum Rating
Thermal Resistance
Notes:
i.
ii. Thermal resistance measured using Infra-Red Microscopy Technique.
iii. Board temperature T
Product Consistency Distribution Charts
Figure 1. Gain distribution at 60mA
Figure 3. Vbias distribution at 60mA
[2] Distribution data sample size is 500 samples taken from 3 different wafer lots. Future wafer allocated to this product may have nominal values

Symbol
Vd
Vbias
P
P
T
T
STG
in,max
diss
j
400
300
200
100
Operation of this device in excess of any of these limits may cause permanent damage.
anywhere between the upper and lower limits. Circuit losses have been de-embedded from actual measurements.
240
200
160
120
80
40
0
0
1.7
Process Capability for Vbias
Process Capability for Gain
16
LSL = 1.7, Nominal = 2.25, USL = 2.7
LSL = 16.0, Nominal = 17.65, USL = 19.0
CPK Upper = 2.47
Std Dev = 0.19
CPK Lower = 2.78
16.5
1.9
Parameter
Device Supply Voltage
Control Voltage
CW RF Input Power (Vd = 4.0, Vbias=.V)
Total Power Dissipation
Junction Temperature
Storage Temperature
2.1
17
Vbias (V)
[ii]
B
is 25 °C. Derate 21.2mW/ °C for T
Gain (dB)
(Vd = 4.0V, Vbias=2.2V), θ
2.3
17.5
CPK Lower = 6.13
CPK Upper = 4.96
Std Dev = 0.03
2.5
18
[iii]
2.7
18.5
[i]
[2]
2.9
19
B
>124 °C.
jc
= 47 °C/W
Units
V
V
dBm
W
°C
°C
Figure 2. NF distribution at 60mA
240
200
160
120
Absolute Max.
5.5
3.5
0
0.55
50
-65 to 50
80
40
0
Process Capability for NF
0.3
0.4
Nominal = 0.62, USL = 1.0
0.5
0.6
NF (dB)
0.7
CPK = 5.06
Std Dev = 0.025
0.8
0.9
1