mga-637p8 Avago Technologies, mga-637p8 Datasheet

mga-637p8

Manufacturer Part Number

mga-637p8

Description

High Linearity Low Noise Ampli?er

Manufacturer

Avago Technologies

Datasheet

1.MGA-637P8.pdf (14 pages)

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MGA-637P8

High Linearity Low Noise Ampliﬁer

Data Sheet

Description

Avago Technologies’ MGA-637P8 is an economical, easy-

to-use GaAs MMIC Low Noise Ampliﬁer (LNA). This LNA

has low noise and high linearity achieved through the

use of Avago Technologies’ proprietary 0.25 μm GaAs

Enhancement-mode pHEMT process. It is housed in the

miniature 2.0 x 2.0 x 0.75 mm

(DFN) package. The device is designed for optimum use

from 1.5 GHz up to 2.5 GHz. The compact footprint and

low proﬁle coupled with low noise, high gain and high

linearity make this an ideal choice as a low noise ampliﬁer

for cellular infrastructure applications such as LTE, GSM,

CDMA, W-CDMA, CDMA2000 & TD-SCDMA. For optimum

performance at lower frequency from 450 MHz up to

1.5 GHz, MGA-636P8 is recommended. For optimum

performance at higher frequency from 2.5 GHz up to

4 GHz, MGA-638P8 is recommended. All these 3 products,

MGA-636P8, MGA-637P8 and MGA-638P8 share the same

package and pinout conﬁguration.

Pin Conﬁguration and Package Marking

2.0 x 2.0 x 0.75 mm

[1]

[2]

[3]

[4]

Note:

Package marking provides orientation and identiﬁcation

“37” = Product Code

“X” = Month Code

It is recommended to ground Pin1, 4 and 8 which are Not Used.

Pin 1 – Not Used

Pin 2 – RFinput

Pin 3 – Vbias2

Pin 4 – Not Used

Center paddle – GND

TOP VIEW

37X

[8]

[7]

[6]

[5]

8-lead DFN

[8]

[7]

[6]

[5]

Pin 5 – Vbias1

Pin 6 – PwrDwn

Pin 7 – RFoutput

Pin 8 – Not Used

BOTTOM VIEW

8-pin Dual-Flat-Non-Lead

GND

[1]

[2]

[3]

[4]

Features

• High linearity performance.

• Low Noise Figure.

• GaAs E-pHEMT Technology

• Low cost small package size.

• Integrated with active bias and option to access FET

• Integrated power down control pin.

Speciﬁcations

1.7 GHz; 4.8 V, 75 mA

• 17.3 dB Gain

• 0.52 dB Noise Figure

• 11 dB Input Return Loss

• +22.5 dBm Input IP3

• +21.9 dBm Output Power at 1 dB gain compression

Applications

• Cellular infrastructure applications such as LTE, GSM,

• Other low noise applications.

Note:

1. Enhancement mode technology employs positive Vgs, thereby

gate.

CDMA, W-CDMA, CDMA2000 & TD-SCDMA.

eliminating the need of negative gate voltage associated with con-

ventional depletion mode devices.

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model = 80 V

ESD Human Body Model = 350 V

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

[1]

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