bs62uv1027 ETC-unknow, bs62uv1027 Datasheet

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bs62uv1027

Manufacturer Part Number
bs62uv1027
Description
Ultra Power/voltage Cmos Sram 128k
Manufacturer
ETC-unknow
Datasheet
R0201-BS62UV1027
• Wide Vcc operation voltage :
• Ultra low power consumption :
• High speed access time :
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc
PRODUCT FAMILY
FEATURES
-85
-10
Vcc = 2.0V
Vcc = 3.0V
BS62UV1027SC
BS62UV1027TC
BS62UV1027JC
BS62UV1027STC
BS62UV1027PC
BS62UV1027DC
BS62UV1027SI
BS62UV1027TI
BS62UV1027JI
BS62UV1027STI
BS62UV1027PI
BS62UV1027DI
PRODUCT
FAMILY
VCC
CE2
A11
A13
A15
A16
A14
A12
BSI
WE
NC
A9
A8
A7
A6
A5
A4
100ns (Max.)
85ns (Max.)
GND
DQ0
DQ1
DQ2
A16
A14
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
A7
A6
A5
A4
A3
A2
A1
A0
C-grade : 1.8V ~ 3.6V
I-grade : 1.9V ~ 3.6V
(Vcc_min.=1.65V at 25
C-grade : 7mA (Max.) operating current
C-grade : 13mA (Max.) operating current
I -grade : 8mA (Max.) operating current
0.05uA (Typ.) CMOS standby current
I- grade : 15mA (Max.) operating current
0.10uA (Typ.) CMOS standby current
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
BS62UV1027SC
BS62UV1027SI
BS62UV1027PC
BS62UV1027PI
BS62UV1027JC
BS62UV1027JI
BS62UV1027TC
BS62UV1027STC
BS62UV1027TI
BS62UV1027STI
TEMPERATURE
-40
+0
OPERATING
O
O
Ultra Low Power/Voltage CMOS SRAM
128K X 8 bit
C to +70
C to +85
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
O
o
O
C)
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
C
C
. reserves the right to modify document contents without notice.
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
1.8V ~ 3.6V
1.9V ~ 3.6V
RANGE
Vcc
C-grade:1.8~3.6V
I-grade:1.9~3.6V
SPEED
85/100
85/100
(ns)
• Data retention supply voltage as low as 1.2V
• Easy expansion with CE2, CE1 and OE options
The BS62UV1027 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.05uA at 2.0V/25
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62UV1027 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62UV1027 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4
mm STSOP and 8mmx20mm TSOP.
1
DESCRIPTION
BLOCK DIAGRAM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE2
A12
A14
A16
A15
A13
A11
CE1
Vdd
Gnd
WE
OE
A6
A7
A8
A9
1.3uA
2.5uA
Vcc=
3.0V
STANDBY
(I
CCSB1
Address
Buffer
Input
POWER DISSIPATION
8
Control
8
o
, Max)
C and maximum access time of 85ns at 85
0.5uA
1.0uA
Vcc=
2.0V
20
Output
Data
Buffer
Data
Buffer
Input
Decoder
Row
13mA
15mA
Vcc=
3.0V
Operating
(I
CC
, Max)
8
1027
8
BS62UV1027
Vcc=
7mA
2.0V
8mA
A5
Address Input Buffer
A4
Column Decoder
Memory Array
Write Driver
Sense Amp
1027 x 1027
Column I/O
A3 A2 A1 A0 A10
SOP -32
TSOP -32
SOJ -32
STSOP - 32
PDIP -32
DICE
SOP -32
TSOP -32
SOJ - 32
STSOP -32
PDIP- 32
DICE
PKG TYPE
1027
128
14
Revision 2.1
Jan.
o
C.
2004

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bs62uv1027 Summary of contents

Page 1

... The BS62UV1027 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62UV1027 is available in DICE form, JEDEC standard 32 pin 450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4 mm STSOP and 8mmx20mm TSOP. ...

Page 2

... RANGE -0 Commercial Vcc+0.5 O -40 to +85 C Industrial O -60 to +150 C 1.0 W CAPACITANCE 20 mA SYMBOL This parameter is guaranteed and not 100% tested. 2 BS62UV1027 Function I/O OPERATION Vcc CURRENT High CCSB High OUT AMBIENT TEMPERATURE + ...

Page 3

... IN IN See Retention Waveform ( CE1 Controlled ) Data Retention Mode ≥ V 1.2V DR Vcc t CDR ≥ CE1 Vcc - 0. CE2 Controlled ) Data Retention Mode V ≧ 1.2V DR Vcc t CDR CE2 ≦ 0. BS62UV1027 (1) MIN. TYP. MAX. 0.6 Vcc=2.0V (5) -0.3 -- 0.8 Vcc=3.0V 1.4 Vcc=2.0V -- Vcc+0.3 2.0 Vcc=3. 0.2 Vcc=2. 0.4 Vcc=3. ...

Page 4

... Chip Select to Output Low Z (CE2) Output Enable to Output in Low Z Chip Deselect to Output in High Z (CE1) Chip Deselect to Output in High Z (CE2) Output Disable to Output in High Z Data Hold from Address Change 4 BS62UV1027 KEY TO SWITCHING WAVEFORMS INPUTS OUTPUTS MUST BE MUST BE STEADY STEADY MAY CHANGE WILL BE ...

Page 5

... The parameter is guaranteed but not 100% tested. R0201-BS62UV1027 ACS1 t ACS2 (5) t CLZ OLZ t ACS1 (5) t CLZ1 t ACS2 (5) t CLZ2 and CE2 IH. 5 BS62UV1027 CHZ1, CHZ2 t OH (5) t OHZ (1,5) t CHZ1 (2,5) t CHZ2 Revision 2.1 Jan. 2004 ...

Page 6

... Data to Write Time Overlap Data Hold from Write Time Output Disable to Output in High Z End of Write to Output Active t WC (11 (5) ( (4,10) t OHZ 6 BS62UV1027 C ) CYCLE TIME : 85ns CYCLE TIME : 100ns (Vcc = 1.9~3.6V) (Vcc = 1.9~3.6V) MIN. TYP. MAX. MIN. TYP. MAX 100 -- 100 -- ...

Page 7

... The parameter is guaranteed but not 100% tested. 11 measured from the later of CE1 going low or CE2 going high to the end of write. CW R0201-BS62UV1027 t WC (11 (5) (5) (11 ( (4,10) t WHZ ). IL 7 BS62UV1027 t WR2 ( (7) ( (8,9) DH Revision 2.1 Jan. 2004 ...

Page 8

... BSI ORDERING INFORMATION BS62UV1027 X X Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support systems and critical medical instruments ...

Page 9

... BSI PACKAGE DIMENSIONS (continued) STSOP - 32 TSOP - 32 R0201-BS62UV1027 BS62UV1027 9 Revision 2.1 Jan. 2004 ...

Page 10

... BSI PACKAGE DIMENSIONS (continued) SOJ - 32 PDIP - 32 R0201-BS62UV1027 10 BS62UV1027 Revision 2.1 Jan. 2004 ...

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