bs62uv2006 ETC-unknow, bs62uv2006 Datasheet

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bs62uv2006

Manufacturer Part Number
bs62uv2006
Description
Asynchronous 2m 256kx8 Bits Static
Manufacturer
ETC-unknow
Datasheet
R0201-BS62UV2006
• Wide Vcc operation voltage :
• Ultra low power consumption :
• High speed access time :
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
BS62UV2006DC
BS62UV2006TC
BS62UV2006STC
BS62UV2006SC
BS62UV2006DI
BS62UV2006TI
BS62UV2006STI
BS62UV2006SI
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc
PRODUCT FAMILY
FEATURES
VCC
CE2
A11
A13
A15
A17
A16
A14
A12
Vcc = 2.0V
Vcc = 3.0V
-85
-10
WE
A9
A8
A7
A6
A5
A4
PRODUCT
FAMILY
GND
DQ0
DQ1
DQ2
A17
A16
A14
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A7
A6
A5
A4
A3
A2
A1
A0
BSI
100ns (Max.)
85ns (Max.)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
BS62UV2006SC
BS62UV2006SI
BS62UV2006TC
BS62UV2006STC
BS62UV2006TI
BS62UV2006STI
C-grade : 8mA (Max.) operating current
C-grade : 11mA (Max.) operating current
I- grade : 10mA (Max.) operating current
0.20uA (Typ.) CMOS standby current
I- grade : 13mA (Max.) operating current
0.30uA (Typ.) CMOS standby current
C-grade: 1.8V~3.6V
(Vcc_min.=1.65V at 25
I-grade: 1.9V~3.6V
-40
TEMPERATURE
+0
OPERATING
O
O
C to +70
C to +85
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Ultra Low Power/Voltage CMOS SRAM
256K X 8 bit
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
O
O
C
C
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
1.9V ~ 3.6V
1.8V ~3.6V
o
. reserves the right to modify document contents without notice.
C)
RANGE
Vcc
C-grade:1.8~3.6V
I-grade:1.9~3.6V
SPEED
85/100
85/100
( ns )
• Data retention supply voltage as low as 1.0V
• Easy expansion with CE2, CE1, and OE options
The BS62UV2006 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 262,144 words by 8 bits
and operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.2u
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62UV2006 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62UV2006 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.
1
DESCRIPTION
BLOCK DIAGRAM
A
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE1
CE2
A15
A16
A14
A12
Vdd
Gnd
A13
A17
at 2.0
WE
Vcc=3.0V
OE
OE
A7
A6
A5
A4
3.0uA
5.0uA
( I
STANDBY
V
CCSB1
/25
Address
Buffer
Input
o
, Max )
POWER DISSIPATION
C
8
Control
8
Vcc=2.0V
and maximum access time of 85ns at 85
2.0uA
3.0uA
20
Output
Data
Buffer
Data
Buffer
Input
Decoder
Vcc=3.0V
Row
11mA
13mA
Operating
( I
CC
8
1024
, Max )
8
BS62UV2006
Vcc=2.0V
10mA
A11
8mA
Address Input Buffer
A9
Column Decoder
Memory Array
A8 A3 A2 A1
Write Driver
Sense Amp
1024 x 2048
Column I/O
TSOP-32
STSOP-32
DICE
SOP-32
DICE
TSOP-32
STSOP-32
SOP-32
2048
PKG TYPE
256
16
Revision 1.1
Jan.
A0
o
C
.
A10
2004

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bs62uv2006 Summary of contents

Page 1

... HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62UV2006 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62UV2006 is available in DICE form, JEDEC standard 32 pin 450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP. SPEED STANDBY ...

Page 2

... RANGE -0 Vcc+0.5 Commercial O -40 to +85 C Industrial O -60 to +150 C 1.0 W CAPACITANCE 20 mA SYMBOL This parameter is guaranteed and not 100% tested. 2 BS62UV2006 Function I/O OPERATION Vcc CURRENT High CCSB High OUT AMBIENT TEMPERATURE + ...

Page 3

... Vcc - 0. ≦ 0. See Retention Waveform ( CE1 Controlled ) Data Retention Mode ≥ V 1.0V DR Vcc t CDR ≥ CE1 Vcc - 0. CE2 Controlled ) Data Retention Mode V ≧ 1.0V DR Vcc t CDR CE2 ≦ 0. BS62UV2006 MIN. TYP. (1) MAX. -- 0.6 Vcc=2.0V (5) -0.3 -- 0.8 Vcc=3.0V 1.4 -- Vcc=2.0V Vcc+0.3 2.0 -- Vcc=3. 0.2 Vcc=2.0V ...

Page 4

... Chip Select to Output Low Z (CE2) Output Enable to Output in Low Z (CE1) Chip Deselect to Output in High Z Chip Deselect to Output in High Z (CE2) Output Disable to Output in High Z Data Hold from Address Change 4 BS62UV2006 KEY TO SWITCHING WAVEFORMS INPUTS OUTPUTS MUST BE MUST BE STEADY STEADY MAY CHANGE WILL BE ...

Page 5

... The parameter is guaranteed but not 100% tested. R0201-BS62UV2006 ACS1 t ACS2 (5) t CLZ OLZ t ACS1 (5) t CLZ1 t ACS2 (5) t CLZ2 and CE2 IH. 5 BS62UV2006 CHZ1, CHZ2 t OH (5) t OHZ (1,5) t CHZ1 (2,5) t CHZ2 Revision 1.1 Jan. 2004 ...

Page 6

... Data Hold from Write Time Output Disable to Output in High Z End of Write to Output Active t WC (11 (5) ( (4,10) t OHZ 6 BS62UV2006 CYCLE TIME : 85ns CYCLE TIME : 100ns (Vcc = 1.9~3.6V) (Vcc = 1.9~3.6V) MIN. TYP. MAX. MIN. TYP. MAX. 100 -- -- 85 -- 100 -- -- ...

Page 7

... The parameter is guaranteed but not 100% tested. 11 measured from the later of CE1 going low or CE2 going high to the end of write. CW R0201-BS62UV2006 t WC (11 (5) (5) (11 ( (4,10) t WHZ ). IL 7 BS62UV2006 t WR2 (3) t (7) ( (8,9) DH Revision 1.1 Jan. 2004 ...

Page 8

... BSI ORDERING INFORMATION BS62UV2006 X X Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support systems and critical medical instruments ...

Page 9

... BSI PACKAGE DIMENSIONS (continued) TSOP - 32 SOP -32 R0201-BS62UV2006 b WITH PLATING BASE METAL SECTION A-A 9 BS62UV2006 Revision 1.1 Jan. 2004 ...

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