bs62lv8000bi Brillance Semiconductor, bs62lv8000bi Datasheet

bs62lv8000bi

Manufacturer Part Number

bs62lv8000bi

Description

Very Power/voltage Cmos Sram

Manufacturer

Brillance Semiconductor

Datasheet

1.BS62LV8000BI.pdf (10 pages)

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R0201-BS62LV8000

• Wide Vcc operation voltage : 2.4V ~ 5.5V

• Very low power consumption :

• High speed access time :

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

BS62LV8000EC

BS62LV8000BC

BS62LV8000EI

BS62LV8000BI

PRODUCT FAMILY

Brilliance Semiconductor Inc

FEATURES

PIN CONFIGURATIONS

VCC

GND

Vcc = 3V

Vcc = 5V

-70

-10

DQ0

DQ1

DQ2

DQ3

CE1

A19

A18

A17

A16

A15

PRODUCT

48-Ball CSP top View

FAMILY

VSS

A18

VCC

BSI

100ns (Max) at Vcc = 3V

70ns (Max) at Vcc = 3V

BS62LV8000EC

BS62LV8000EI

C-grade: 20mA (Max.) operating current

C-grade: 45mA (Max.) operation current

I -grade: 25mA (Max.) operating current

0.5uA (Typ.) CMOS standby current

I -grade: 50mA (Max.) operating current

3uA (Typ.) CMOS standby current

VCC

A17

A14

A12

-40

TEMPERATURE

A16

A15

A13

A10

OPERATING

C to +70

C to +85

Very Low Power/Voltage CMOS SRAM

1M X 8 bit

A11

CE1

CE2

VCC

VSS

A19

CE2

DQ7

DQ6

GND

VCC

DQ5

DQ4

A10

A11

A12

A13

A14

. reserves the right to modify document contents without notice.

2.4V ~ 5.5V

RANGE

Vcc

70 / 100

SPEED

Vcc=3V

( ns )

FUNCTIONAL BLOCK DIAGRAM

The BS62LV8000 is a high performance, very low power CMOS

Static Random Access Memory organized as 1,048,576 words by 8 bits

and operates from a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.5uA and maximum access time of 70ns in 3V operation.

Easy memory expansion is provided by an active LOW chip

enable (CE1), an active HIGH chip enable(CE2) and active LOW output

enable (OE) and three-state output drivers.

The BS62LV8000 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62LV8000 is available in 44 pin TSOP2 and 48-pin BGA type.

A13

A17

A15

A18

A16

A14

A12

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

GENERAL DESCRIPTION

CE1

Vdd

Gnd

CE2

Vcc=3V

Address

Buffer

3uA

6uA

Input

( I

STANDBY

CCSB1

Control

POWER DISSIPATION

, Max )

Vcc=5V

100uA

30uA

Output

Buffer

Data

Input

Data

Decoder

Row

Vcc=3V

20mA

25mA

Operating

( I

2048

, Max )

A11A9 A8 A3 A2 A1 A0A10 A19

BS62LV8000

Vcc=5V

45mA

50mA

Address Input Buffer

Column Decoder

Memory Array

2048 X 4096

Write Driver

Sense Amp

Column I/O

4096

BGA-48-0810

TSOP2-44

BGA-48-0810

512

PKG TYPE

Revision 2.4

April 2002

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bs62lv8000bi Summary of contents

Page 1

... Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options PRODUCT FAMILY PRODUCT OPERATING FAMILY TEMPERATURE BS62LV8000EC +70 BS62LV8000BC BS62LV8000EI O - +85 BS62LV8000BI PIN CONFIGURATIONS ...

Page 2

BSI PIN DESCRIPTIONS Name A0-A19 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc Gnd TRUTH TABLE MODE WE X Not selected (Power Down ...

Page 3

BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL (2) Voltage Guaranteed Input High V IH (2) Voltage I Input Leakage Current IL I Output Leakage Current OL V Output Low Voltage OL V Output High Voltage ...

Page 4

BSI AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level AC TEST LOADS AND WAVEFORMS Ω 1269 3.3V OUTPUT 100PF INCLUDING Ω 1404 JIG AND SCOPE FIGURE 1A THEVENIN EQUIVALENT 667 OUTPUT ...

Page 5

BSI SWITCHING WAVEFORMS (READ CYCLE (1,2,4) READ CYCLE1 ADDRESS D OUT READ CYCLE2 (1,3,4) CE2 CE1 D OUT (1,4) READ CYCLE3 ADDRESS OE CE2 CE1 D OUT NOTES high in read Cycle. 2. Device is continuously selected ...

Page 6

BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX E1LWH AVW AVWH WLWH WHAX WLOZ WHZ ...

Page 7

BSI (1,6) WRITE CYCLE2 ADDRESS CE2 CE1 WE D OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low. ...

Page 8

BSI ORDERING INFORMATION BS62LV8000 PACKAGE DIMENSIONS TSOP2-44 R0201-BS62LV8000 BS62LV8000 SPEED 70: 70ns 10: 100ns GRADE + - + PACKAGE E: TSOP2-44 B: ...

Page 9

BSI PACKAGE DIMENSIONS (continued) SIDE VIEW D 0.1 D1 VIEW A 48 mini-BGA (8 x 10mm) R0201-BS62LV8000 NOTES: 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 3: SYMBOL "N" IS THE NUMBER OF ...

Page 10

BSI REVISION HISTORY Revision Description 2.2 2001 Data Sheet release 2.3 Modify Standby Current (Typ. and Max.) 2.4 Modify some AC parameters. Modify 5V ICCSB1_Max(I-grade) from 50uA to 100uA. R0201-BS62LV8000 Date Apr. 15, 2001 Jun. 29, 2001 April,11,2002 10 BS62LV8000 ...

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