bs62lv2563ji ETC-unknow, bs62lv2563ji Datasheet

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bs62lv2563ji

Manufacturer Part Number
bs62lv2563ji
Description
Random Access Memory
Manufacturer
ETC-unknow
Datasheet
R0201-BS62LV2563
• Wide Vcc operation voltage : 2.4V ~ 3.6V
• Very low power consumption :
• High speed access time :
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc
FEATURES
PRODUCT FAMILY
Vcc = 3.0V
-70
BS62LV2563SC
BS62LV2563TC
BS62LV2563PC
BS62LV2563JC
BS62LV2563DC
BS62LV2563SI
BS62LV2563TI
BS62LV2563PI
BS62LV2563JI
BS62LV2563DI
VCC
PRODUCT
A11
A13
A14
A12
WE
OE
A9
A8
A7
A6
A5
A4
A3
FAMILY
BSI
70ns (Max.) at Vcc = 3.0V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
GND
DQ0
DQ1
DQ2
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
0.01uA (Typ.) CMOS standby current
C-grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
1
2
3
4
5
6
7
8
9
10
11
12
13
14
BS62LV2563TC
BS62LV2563TI
BS62LV2563SC
BS62LV2563SI
BS62LV2563PC
BS62LV2563PI
BS62LV2563JC
BS62LV2563JI
-40
TEMPERATURE
0
OPERATING
O
O
Very Low Power/Voltage CMOS SRAM
32K X 8 bit
C to +70
C to +85
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
O
O
28
27
26
25
24
23
22
21
20
19
18
17
16
15
C
C
. reserves the right to modify document contents without notice.
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
2.4V ~ 3.6V
2.4V ~ 3.6V
RANGE
Vcc
SPEED
Vcc=3.0V
The BS62LV2563 is a high performance , very low power CMOS
Static Random Access Memory organized as 32,768 words by 8 bits
and operates from a wide range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.01uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by an active LOW chip enable(CE)
,and active LOW output enable(OE) and three-state output drivers.
The BS62LV2563 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV2563 is available in the JEDEC standard 28 pin 330mil
Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP and 8mmx13.4mm
TSOP (normal type).
(ns)
1
70
70
BLOCK DIAGRAM
DESCRIPTION
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
A12
A14
A13
A11
Vdd
Gnd
WE
CE
OE
A5
A6
A7
A8
A9
Address
Buffer
Input
STANDBY
(I
8
Control
CCSB1
8
Vcc=3.0V
0.2uA
0.4uA
POWER DISSIPATION
, Max)
18
Output
Data
Buffer
Data
Buffer
Input
Decoder
Row
8
BS62LV2563
512
Operating
8
(I
Vcc=3.0V
CC
20mA
25mA
, Max)
A4
Address Input Buffer
Column Decoder
A3 A2 A1 A0 A10
Memory Array
Write Driver
Sense Amp
512 x 512
Column I/O
512
64
12
Revision 2.3
Jan.
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
TYPE
PKG
2004

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bs62lv2563ji Summary of contents

Page 1

... BS62LV2563PI BS62LV2563JI BS62LV2563DI PIN CONFIGURATIONS A14 1 28 A12 BS62LV2563SC BS62LV2563SI BS62LV2563PC BS62LV2563PI BS62LV2563JC BS62LV2563JI DQ0 11 18 DQ1 12 17 DQ2 13 16 GND A11 A13 BS62LV2563TC 7 VCC ...

Page 2

BSI PIN DESCRIPTIONS Name A0-A14 Address Input CE Chip Enable Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc Gnd TRUTH TABLE MODE WE Not selected X Output Disabled H Read H Write L ABSOLUTE ...

Page 3

BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL (2) Voltage Guaranteed Input High V IH (2) Voltage I Input Leakage Current IL I Output Leakage Current LO V Output Low Voltage OL V Output High Voltage ...

Page 4

BSI AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level AC TEST LOADS AND WAVEFORMS Ω 1269 3.3V OUTPUT OUTPUT 100PF INCLUDING Ω 1404 JIG AND SCOPE FIGURE 1A THEVENIN EQUIVALENT Ω ...

Page 5

BSI SWITCHING WAVEFORMS (READ CYCLE) (1,2,4) READ CYCLE1 ADDRESS D OUT (1,3,4) READ CYCLE2 CE D OUT (1,4) READ CYCLE3 ADDRESS OUT NOTES high in read Cycle. 2. Device is continuously selected when CE ...

Page 6

BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX E1LWH AVWL AVWH WLWH WHAX WLOZ WHZ t ...

Page 7

BSI (1,6) WRITE CYCLE2 ADDRESS OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals ...

Page 8

BSI ORDERING INFORMATION BS62LV2563 X X Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application ...

Page 9

BSI PACKAGE DIMENSIONS (continued TSOP - 28 PDIP - 28 R0201-BS62LV2563 12°(2x) 12°(2x Seating Plane 15 12° (2X) "A" SEATING PLANE 15 12 (2X "A" DATAIL ...

Page 10

BSI PACKAGE DIMENSIONS (continued) SOJ - 28 R0201-BS62LV2563 BS62LV2563 10 Revision 2.3 Jan. 2004 ...

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