as6c4008 Alliance Memory, Inc, as6c4008 Datasheet - Page 5

no-image

as6c4008

Manufacturer Part Number
as6c4008
Description
512k X 8 Bit Low Power Cm 512k X 8 Bit Low Power Cmos Sram
Manufacturer
Alliance Memory, Inc
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
as6c4008-55PCN
Manufacturer:
ALLIANCE
Quantity:
5 530
Part Number:
as6c4008-55PCN
Quantity:
6 250
Part Number:
as6c4008-55PCN
Manufacturer:
ATM
Quantity:
3 450
Part Number:
as6c4008-55PIN
Manufacturer:
ALLIANCE
Quantity:
20 000
Part Number:
as6c4008-55SIN
Manufacturer:
ALLIANCE
Quantity:
5 530
Part Number:
as6c4008-55SIN
Manufacturer:
ALLIANCE
Quantity:
6 250
Part Number:
as6c4008-55SIN
Manufacturer:
ALLIANC
Quantity:
20 000
Part Number:
as6c4008-55TIN
Manufacturer:
ALLIANC
Quantity:
20 000
Notes:
1. V
2. V
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
CAPACITANCE
n I
Input/Output Capacitance
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
n I
n I
Input and Output Timing Reference Levels
O
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
*These parameters are guaranteed by device characterization, but not production tested.
OCTOBER 2007
Rev. 1.1
u
Typical valued are measured at V
p
p
p
p t
IH
IL
t u
t u
t u
10 October 2007, v 1.1
(min) = V
(max) = V
t u
C
P
R
u
a
s i
L
s l
p
o
e
a
a
e
a
c
PARAMETER
d
SS
L
PARAMETER
PARAMETER
n
a t i
CC
e
d
- 3.0V for pulse width less than 10ns.
v
n
+ 3.0V for pulse width less than 10ns.
F
e
c
l l a
s l
e
i T
(T
m
A
e
= 25 , f
s
512K X 8 BIT LOW POWER CMOS SRAM
CC
= V
= 1.0MHz)
CC
(TYP.) and T
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WC
AW
CW
AS
WP
WR
DW
DH
OW
WHZ
RC
AA
ACE
OE
CLZ
OLZ
CHZ
OHZ
OH
SYM.
SYM.
Alliance Memory Inc.,
SYMBOL
*
*
*
*
*
*
C
C
A
I/O
IN
= 25 ?
MIN.
MIN.
0
3
1.5V
C
2 .
n
L
s
MAX.
MAX.
V
= 30pF + 1TTL, I
o t
MIN.
V
CC
-
-
AS6C4008-55
- 0.2V
MIN.
MIN.
AS6C4008-55
55
10
10
55
50
50
45
25
5
0
0
0
5
-
-
-
-
-
-
OH
MAX.
MAX.
55
55
30
20
20
20
/I
-
-
-
-
-
-
-
-
-
-
-
-
-
OL
MAX
= -1mA/2mA
6
8
MIN.
MIN.
Page 5 of 15
AS6C4008
MAX.
MAX.
UNIT
pF
pF
UNIT
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

Related parts for as6c4008