as7c251mntf18a Alliance Memory, Inc, as7c251mntf18a Datasheet - Page 7

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as7c251mntf18a

Manufacturer Part Number
as7c251mntf18a
Description
2.5v Flowthrough Synchronous Sram With
Manufacturer
Alliance Memory, Inc
Datasheet
State diagram for NTD SRAM
Absolute maximum ratings
Note: Stresses greater than those listed in this table may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions may affect reliability.
Recommended operating conditions
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
Short circuit output current
Storage temperature
Temperature under bias
Supply voltage for inputs
Supply voltage for I/O
Ground supply
12/23/04, v 1.1
Parameter
Parameter
Read
Write
Symbol
Read
V
Writ
V
Vss
DDQ
DD
Alliance Semiconductor
Write
Burst
Read
Burst
V
2.375
2.375
Symbol
DD
Min
0
I
T
V
V
T
OUT
, V
P
bias
stg
IN
IN
d
DDQ
®
Nominal
2.5
2.5
Burs
Dsel
0
Burst
Min
–0.3
–0.3
–0.3
–65
–65
Dsel
2.625
2.625
Burst
Max
Burst
Burst
0
V
V
AS7C251MNTF18A
DDQ
Unit
DD
Max
V
V
V
+150
+135
+3.6
1.8
50
+ 0.3
+ 0.3
P. 7 of 18
Unit
mA
o
o
W
V
V
V
C
C

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