hn58v1001 Renesas Electronics Corporation., hn58v1001 Datasheet - Page 22

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hn58v1001

Manufacturer Part Number
hn58v1001
Description
1m Eeprom 128-kword ? 8-bit Ready/busy And Res Function
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Revision History
Rev.
0.0
1.0
2.0
3.0
Date
Jul. 11. 1991
Jan. 30. 1992
Feb. 20. 1993
Apr. 23. 1993
Contents of Modification
Page
3
4
5
6
16
8
5
6
16
Description
Initial issue
HN58V1001P/FP/T/R-20 to
HN58V1001P/FP/T/R-25
Low power dissipation
Pin Description
Recommended DC Operating Conditions
DC Characteristics
AC Characteristics
Functional Description
Change of Read Timing Waveform
Mode Selection
DC Characteristics
AC Characteristics
Deletion of Mode Description
Addition of Reset function
Change of erase/write cycles in page mode: 10
Change of erase/write cycles in byte mode: 10
Functional Description
Addition of Toggle Bit
100 W max (standby) to 110 W max (standby)
V
V
V
V
I
I
cycle = 1 s/250 ns at V
t
t
t
t
t
t
t
t
Deletion of Write Protection(2)
Change of Data Protection 2
Software data protection
Address: AAAA to AAAA or 2AAA
I/O (11-13, 15-19) to I/O (13-15, 17-21)
V
t
t
10 ms to 15 ms
CC3
CC3
ACC
OE
DF
WC
CS
DL
BLC
DW
RR
DH
CC
IH
IH
H
IH
/t
min: V
max: 70 ns to 50 ns
min: 300 ns to 750 ns
max: 90 ns to 120 ns
max: 450 ns to 600 ns
min: 0 ns to 10 ns
min: 1.9 V to 2.0 V
max: V
min: 2.0 V to 1.9 V
/t
min: 10 ms to 15 ms
min: 150 ns to 250 ns
CH
min: 0.55 s to 1.0 s
power: +5 V to +3V
max: 10 mA to 6 mA
test conditions: cycle = 1 s/200 ns to
CE
to t
max: 200 ns to 250 ns
CC
WS
25 mA to 15 mA
CC
HN58V1001 Series Data Sheet
-1 V to V
/t
+1 V to V
WH
(CE Controlled)
CC
CC
-0.5 V
CC
+0.3 V
= 3.3 V
4
5
to10
to10
3
4

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