hn58v66ati-10e Renesas Electronics Corporation., hn58v66ati-10e Datasheet - Page 20

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hn58v66ati-10e

Manufacturer Part Number
hn58v66ati-10e
Description
64k Eeprom 8-kword X 8-bit Ready/busy Function, Res Function Hn58v66a Wide Temperature Range Version
Manufacturer
Renesas Electronics Corporation.
Datasheet
HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
During a write cycle, addresses are latched by the falling edge of
rising edge of
Write/Erase Endurance and Data Retention Time
The endurance is 10
programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is
page-programmed less than 10
Data Protection
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 15
ns or less.
1. Data Protection against Noise on Control Pins (
Rev.3.00, Feb.02.2004, page 20 of 26
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake. Be careful not to allow noise of a width of more than 15 ns on the
control pins.
,
Pin Operation
or
5
cycles in case of the page programming and 10
.
4
cycles.
WE
CE
OE
15 ns max
,
,
) during Operation
4
or
cycles in case of the byte
V
0 V
V
0 V
IH
IH
, and data is latched by the

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