m52d32162a Elite Semiconductor Memory Technology Inc., m52d32162a Datasheet - Page 3

• Manufacturer Part Number: m52d32162a
• Description: 1m X 16bit X 2banks Mobile Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
ABSOLUTE MAXIMUM RATINGS
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
Note : 1.V
CAPACITANCE
Elite Semiconductor Memory Technology Inc.
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
RAS , CAS , WE , CS , CKE, LDQM,
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
2.V
3.Any input 0V
4.Dout is disabled, 0V
Parameter
IH
IL
(max) = 2.2V AC for pulse width
DD
(min) = -1.0V AC for pulse width
Parameter
DQ0 ~DQ15
supply relative to V
ADDRESS
CLOCK
UDQM
(V
Pin
DD
≤
= 1.8V, TA = 25
V
IN
≤
SS
≤
V
V
SS
DDQ
OUT
V
, all other pins are not under test = 0V.
Symbol
DD
°
≤
V
V
V
V
C
I
I
,V
OL
OH
OL
IL
IH
IL
, f = 1MHz)
V
DDQ
DDQ
≤
≤
V
V
Symbol
.
DD
IN
3ns acceptable.
3ns acceptable.
T
I
P
,V
,V
STG
OS
Symbol
D
OUT
DDQ
C
C
C
0.8 x V
V
C
ADD
OUT
CLK
DDQ
IN
Min
-0.3
-10
-10
1.7
-
– 0.2
SS
DDQ
= 0V, T
A
= 0
Typ
-55 ~ + 150
-1.0 ~ 2.6
-1.0 ~ 2.6
1.8
1.8
Min
°
0
-
-
-
-
2.0
2.0
2.0
3.5
C
Value
0.7
50
~ 70
°
C
)
V
DDQ
Max
1.9
0.3
0.2
10
10
-
Revision : 1.6
+0.3
Publication Date : Jul. 2009
Max
4.0
4.0
4.0
6.0
M52D32162A
Unit
uA
uA
V
V
V
V
V
Unit
°
mA
W
V
V
C
I
I
OH
OL
Unit
pF
pF
pF
pF
3/32
= 0.1mA
Note
=-0.1mA
1
2
3
4