2sd315ai-25 CT-Concept Technologie AG, 2sd315ai-25 Datasheet - Page 8

• Manufacturer Part Number: 2sd315ai-25
• Description: 2sd315ai-25 Dual Scale Driver Core For Halfbridge Igbts Up To 2500v
• Manufacturer: CT-Concept Technologie AG

SCALE Driver
2SD315AI-25 Data Sheet
Operating conditions
Operating temperature
Storage temperature
Footnotes to the key data
1)
2)
3)
4)
5)
6)
7)
8)
9)
10)
11)
12)
Page 8
Operating Conditions
The drivers have a zener diode on each channel for over-voltage protection. When the feed voltage
exceeds 16V, this protection can be subject to thermal overload.
If the specified power consumption is exceeded, this indicates an overload of the DC/DC converter.
It should be noted that these DC/DC converters are not protected against overload.
This should be considered as a recommended value. Please consult the section: “Output power
and self-heating”.
Under-voltage monitoring for protecting the power semiconductors. The voltage refers to the local
supply voltage of each individual drive channel. However, this corresponds approximately to the
voltage at VDC with respect to GND.
The input levels must never exceed the limits of the supply voltage (i.e. between GND and VDD),
otherwise latch-up of the integrated circuits LDI 00I can occur. Particular care must be taken when
driving via cables or longer leads.
The gate current must be limited to its maximum value by a gate resistor.
First value: At a load of 39nF in series with 5.6Ω/Second value: At a load of 250nF in series with
1.8Ω
Maximum continuous or repeatedly-applied DC voltage between all inputs and all outputs.
This specification guarantees that the drive information will be transferred reliably even at a high
DC-link voltage and fastest switching operations.
The application-specific self-heating of the drivers – specially at high load – must be taken into
account.
The test voltage of 5000 Vac(rms)/50Hz may be applied only once during one minute. It should be
noted that with this (strictly speaking obsolete) test method, some (minor) damage occurs to the
isolation layers due to the partial discharge. Consequently, this test is not performed at CONCEPT
as a series test. In the case of repeated isolation tests (e.g. module test, equipment test, system
test) the subsequent tests should be performed with a lower test voltage: the test voltage is
reduced by 500V for each additional test. The more modern if more elaborate partial-discharge
measurement is better suited than such test methods as it is almost entirely non-destructive.
The typical blocking time after an error is 1 second. If required, versions with other blocking times
may also be supplied.
Test conditions
(see Note 10)
INTELLIGENT POWER ELECTRONICS
min max
-40 +85
-40 +90
unit
°C
°C