2sd1928 Inchange Semiconductor Company, 2sd1928 Datasheet

2sd1928

Manufacturer Part Number

2sd1928

Description

Isc Silicon Npn Darlington Power Transistor

Manufacturer

Inchange Semiconductor Company

Datasheet

1.2SD1928.pdf (2 pages)

Current page: 1 of 2
Download datasheet (228Kb)

INCHANGE Semiconductor

isc

DESCRIPTION

·Collector-Emitter Saturation Voltage-

·High DC Current Gain

APPLICATIONS

·Designed for audio frequency power amplifier and low

ABSOLUTE MAXIMUM RATINGS(T

isc Website：www.iscsemi.cn

SYMBOL

: V

: h

speed switching industrial use.

CBO

CEO

EBO

stg

CE(sat)

Silicon NPN Darlington Power Transistor

= 2000(Min) @ I

= 1.5V(Max) @I

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Pulse

Base Current-Continuous

Collector Power Dissipation

@ T

Collector Power Dissipation

@ T

Junction Temperature

Storage Temperature Range

=25℃

PARAMETER

= 4A

=25

℃)

-55~150

VALUE

100

150

0.8

UNIT

℃

isc

Product Specification

2SD1928

Related parts for 2sd1928

2sd1928 Summary of contents

Page 1

... Base Current-Continuous B B Collector Power Dissipation @ T =25℃ Collector Power Dissipation @ T =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT 100 V 100 0 ℃ 150 ℃ -55~150 isc Product Specification 2SD1928 ...

Page 2

... CONDITIONS 4mA 4A 4mA 100V 4mA Product Specification 2SD1928 MIN TYP. MAX UNIT 1.5 V 2.0 V μA 1.0 3.0 mA 2000 20000 500 μs 0.4 μs 2.5 μs 0.5 ...

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