2sd1911 Inchange Semiconductor Company, 2sd1911 Datasheet
![no-image](/images/no-image-200.jpg)
2sd1911
Manufacturer Part Number
2sd1911
Description
Silicon Npn Power Transistors
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SD1911.pdf
(3 pages)
Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High breakdown voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·For use in TV horizontal output applications
PINNING
Absolute maximum ratings(T
SYMBOL
V
V
V
PIN
T
I
P
CBO
CEO
EBO
I
CM
T
1
2
3
C
stg
C
j
Base
Collector
Emitter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
DESCRIPTION
PARAMETER
a
=25
℃)
Open emitter
Open base
Open collector
T
C
=25℃
Fig.1 simplified outline (TO-3PML) and symbol
CONDITIONS
Product Specification
-55~150
VALUE
1500
600
150
2SD1911
10
50
6
5
UNIT
℃
℃
W
V
V
V
A
A
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2sd1911 Summary of contents
Page 1
... Collector power dissipation C T Junction temperature j T Storage temperature stg Fig.1 simplified outline (TO-3PML) and symbol ℃) =25 a CONDITIONS Open emitter Open base Open collector T =25℃ C Product Specification 2SD1911 VALUE UNIT 1500 V 600 ℃ 150 ℃ -55~150 ...
Page 2
... Emitter cut-off current EBO h DC current gain FE Diode forward voltage V F CONDITIONS MIN I =0. 600 =4. =1. =4. =1. =800V = Product Specification 2SD1911 TYP. MAX UNIT V 5.0 V 1.5 V μ 200 2.0 V ...
Page 3
... Inchange Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) Product Specification 3 2SD1911 ...