2sd1912 Inchange Semiconductor Company, 2sd1912 Datasheet - Page 2

• Manufacturer Part Number: 2sd1912
• Description: Isc Silicon Npn Power Transistor
• Manufacturer: Inchange Semiconductor Company

INCHANGE Semiconductor
isc
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
isc Website：www.iscsemi.cn
SYMBOL
V
70-140
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
h
h
CE
I
I
C
BE
CBO
EBO
h
FE-1
FE-2
Q
f
OB
T
(sat)
(on)
FE-1
Silicon NPN Power Transistor
Classifications
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
Current-Gain—Bandwidth Product
100-200
R
PARAMETER
140-280
S
I
I
I
I
I
V
V
I
I
I
I
C
C
E
C
C
C
C
E
C
CB
EB
= 1mA; I
= 0; V
= 5mA; R
= 1mA; I
= 2A; I
= 0.5A; V
= 0.5A; V
= 3A; V
= 0.5A; V
= 4V; I
= 40V; I
2
CB
B
CE
= 0.2A
B
= 10V, f= 1MHz
CONDITIONS
C
C
E
CE
= 0
CE
CE
BE
= 0
= 0
E
= 5V
= 0
= 5V
= 5V
= 5V
= ∞
isc
Product Specification
MIN
60
60
70
20
6
TYP.
100
40
2SD1912
MAX
100
100
280
1.0
1.0
UNIT
MHz
μA
μA
pF
V
V
V
V
V