2sd1376k Renesas Electronics Corporation., 2sd1376k Datasheet - Page 2

• Manufacturer Part Number: 2sd1376k
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SD1376(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note:
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note:
2
1. Value at T
1. Pulse test.
C
= 25 C.
Symbol
V
V
I
I
h
V
V
V
V
V
Ton
Toff
CBO
CEO
FE
(BR)CEO
(BR)EBO
CE (sat)1
CE (sat)2
BE (sat)1
BE (sat)2
D
Min
120
7
—
—
2000
—
—
—
—
—
—
—
Symbol
V
V
V
I
I
P
Tj
Tstg
I
Typ
—
—
—
—
—
—
—
—
—
—
0.5
2.0
C
C (peak)
D
CBO
CEO
EBO
C
*
*
1
1
Max
—
—
100
10
30000
1.5
2.0
2.0
2.5
3.0
—
—
Unit
V
V
V
V
V
V
V
A
A
s
s
Rating
120
120
7
1.5
3.0
20
150
–55 to +150
1.5
Test conditions
I
I
V
V
V
I
I
I
I
I
I
C
E
C
C
C
C
D
C
CB
CE
CE
= 50 mA, I
= 10 mA, R
= 1 A, I
= 1.5 A, I
= 1 A, I
= 1.5 A, I
= 1.5 A*
= 1 A, I
= 120 V, I
= 100 V, R
= 3 V, I
B
B
B1
1
= 1 mA*
= 1 mA*
C
B
B
= –I
Unit
V
V
V
A
A
W
A
C
= 1 A*
= 1.5 mA*
= 1.5 mA*
C
C
E
BE
= 0
BE
= 0
B2
=
=
= 1 mA
1
1
1
1
1