2sd1126k Renesas Electronics Corporation., 2sd1126k Datasheet - Page 2

• Manufacturer Part Number: 2sd1126k
• Description: Silicon Npn Triple Diffused
• Manufacturer: Renesas Electronics Corporation.

2SD1126(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note:
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note:
2
1. Value at T
1. Pulse test.
C
= 25 C.
Symbol
V
V
I
I
h
V
V
V
V
V
t
t
CBO
CEO
on
off
FE
(BR)CEO
(BR)EBO
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
D
Min
120
7
—
—
1000
—
—
—
—
—
—
—
Symbol
V
V
V
I
I
P
Tj
Tstg
I
Typ
—
—
—
—
—
—
—
—
—
—
0.8
8.0
C
C(peak)
D
CBO
CEO
EBO
C
*
1
Max
—
—
100
10
2000
1.5
3.0
2.0
3.5
3.0
—
—
Unit
V
V
V
V
V
V
V
A
A
s
s
Ratings
120
120
7
10
15
50
150
–55 to +150
10
Test conditions
I
I
V
V
V
I
I
I
I
I
I
C
E
C
C
C
C
D
C
CB
CE
CE
= 200 mA, I
= 25 mA, R
= 5 A, I
= 10 A, I
= 5 A, I
= 10 A, I
= 10 A*
= 5 A, I
= 120 V, I
= 100 V, R
= 3 V, I
B
B
B1
1
B
B
= 10 mA*
= 10 mA*
C
= –I
Unit
V
V
V
A
A
W
A
= 0.1 A*
= 0.1 A*
= 5 A*
C
C
E
BE
C
BE
= 0
= 0
B2
=
=
= 10 mA
1
1
1
1
1