2sd1154 Inchange Semiconductor Company, 2sd1154 Datasheet
2sd1154
Manufacturer Part Number
2sd1154
Description
Isc Silicon Npn Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SD1154.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output for B/W TV set.
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
: V
V
V
V
T
I
P
CBO
CEO
EBO
I
CM
T
(BR)CEO
C
stg
Silicon NPN Power Transistor
C
j
= 200V (Min)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@T
Junction Temperature
Storage Temperature Range
C
=25℃
PARAMETER
a
=25
℃)
-65~150
MAX
350
200
150
10
50
6
7
UNIT
W
℃
℃
V
V
V
A
A
isc
Product Specification
2SD1154
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2sd1154 Summary of contents
Page 1
... EBO I Collector Current-Continuous C I Collector Current-Peak CM Collector Power Dissipation =25℃ Junction Temperature j T Storage Temperature Range stg isc Website：www.iscsemi.cn ℃) =25 a MAX UNIT 350 V 200 ℃ 150 ℃ -65~150 isc Product Specification 2SD1154 ...
Page 2
... 5mA ; 350V 350V 0;T = 100℃ 6V 5A;I = 0.5A;V = -5V;R = 0.5Ω 2SD1154 MIN MAX UNIT 200 1 μs 0.75 ...