2sd1162 Inchange Semiconductor Company, 2sd1162 Datasheet - Page 2

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2sd1162

Manufacturer Part Number
2sd1162
Description
Isc Silicon Npn Darlington Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
INCHANGE Semiconductor
isc
ELECTRICAL CHARACTERISTICS
T
Switching Times
isc Website:www.iscsemi.cn
SYMBOL
V
C
V
V
=25℃ unless otherwise specified
(BR)CEO
400-800
h
h
CE(
BE(
I
CBO
t
h
FE-1
FE-2
on
t
t
s
f
FE-1
sat
sat
Silicon NPN Darlington Power Transistor
M
)
)
Classifications
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
DC Current Gain
DC Current Gain
Turn-On Time
Storage Time
Fall Time
600-1200
L
PARAMETER
1000-3000
K
I
I
I
V
I
I
I
R
C
C
C
C
C
C
CB
L
= 10mA ; I
= 2A; I
= 2A; I
= 2A ; V
= 3A ; V
= 3A; I
= 50Ω,V
= 400V; I
2
B
B
B1
CONDITIONS
= 5mA
B
= 5mA
B
CE
CE
= -I
CC
= 2V
= 2V
B
E
= 0
B2
≈150V
= 0
= 30mA;
isc
Product Specification
MIN
300
400
100
TYP.
1.0
12
6
2SD1162
MAX
3000
1.5
2.0
10
UNIT
μA
μs
μs
μs
V
V
V

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