2sd1119g Panasonic Corporation of North America, 2sd1119g Datasheet - Page 2

• Manufacturer Part Number: 2sd1119g
• Description: Bipolar Power Transistors
• Manufacturer: Panasonic Corporation of North America

2SD1119G
2
0.001
0.01
400
300
200
100
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
− 0.01
0
0
1
0.01
0
Ambient temperature T
20
Collector current I
Emitter current I
40
V
− 0.1
Copper plate at the collector
is more than 1 cm
1.7 mm in thickness
0.1
CE(sat)
P
60
f
C
T
25°C
 T
 I
80
T
a
 I
= 75°C
100
E
−25°C
a
−1
E
This product complies with the RoHS Directive (EU 2002/95/EC).
1
C
C
120
V
T
2
I
( A )
C
a
in area,
a
CB
( A )
/ I
= 25°C
( °C )
= 6 V
140
B
= 30
−10
160
10
0.01
100
100
0.1
2.4
2.0
1.6
1.2
0.8
0.4
10
80
60
40
20
1
0.01
0
0
1
0
Collector-emitter voltage V
Collector-base voltage V
0.4
Collector current I
SJD00339AED
V
T
0.1
C
0.8
a
I
BE(sat)
= −25°C
C
ob
 V
 V
10
1.2
 I
CE
25°C
CB
75°C
1.6
1
C
C
I
I
I
f = 1 MHz
T
C
T
B
E
a
( A )
CB
a
= 0
= 7 mA
/ I
= 25°C
= 25°C
CE
2.0
B
= 30
( V )
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
( V )
100
10
2.4
600
500
400
300
200
100
0
0.01
6
5
4
3
2
1
0
0
V
CE
Base-emitter voltage V
= 2 V
Collector current I
0.4
0.1
I
h
C
T
T
0.8
FE
a
a
 V
= 75°C
= 75°C
−25°C
25°C
 I
1.2
BE
C
1
25°C
C
V
−25°C
BE
( A )
CE
1.6
= 2 V
( V )
2.0
10