2sd1500 Inchange Semiconductor Company, 2sd1500 Datasheet

2sd1500

Manufacturer Part Number

2sd1500

Description

Isc Silicon Npn Darlington Power Transistor

Manufacturer

Inchange Semiconductor Company

Datasheet

1.2SD1500.pdf (2 pages)

Current page: 1 of 2
Download datasheet (235Kb)

INCHANGE Semiconductor

isc

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

·High DC Current Gain

·Low Saturation Voltage

APPLICATIONS

·Designed for high current switching applications.

ABSOLUTE MAXIMUM RATINGS(T

isc Website：www.iscsemi.cn

SYMBOL

: V

: h

CBO

CEO

EBO

stg

(BR)CEO

Silicon NPN Darlington Power Transistor

= 1000(Min) @I

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

Collector Power Dissipation

@ T

Junction Temperature

Storage Temperature Range

= 100V(Min)

=25℃

PARAMETER

= 10A

=25

℃)

-55~150

VALUE

150

100

150

UNIT

℃

isc

Product Specification

2SD1500

Related parts for 2sd1500

2sd1500 Summary of contents

Page 1

... Emitter-Base Voltage EBO I Collector Current-Continuous C I Base Current-Continuous B B Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT 150 V 100 ℃ 150 ℃ -55~150 isc Product Specification 2SD1500 ...

Page 2

... 8V 10A 10A 50V 1MHz E CB test 25mA 5Ω 50V 2SD1500 MIN TYP. MAX UNIT 100 V 1.5 V 2.0 V μ 1000 3 MHz μs 0.6 μs 3.0 μs 1.0 ...

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