2sd1500 Inchange Semiconductor Company, 2sd1500 Datasheet
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2sd1500
Manufacturer Part Number
2sd1500
Description
Isc Silicon Npn Darlington Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SD1500.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
·High DC Current Gain
·Low Saturation Voltage
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(T
isc Website:www.iscsemi.cn
SYMBOL
: V
: h
V
V
V
T
P
T
CBO
CEO
EBO
I
I
stg
C
B
C
FE
J
(BR)CEO
B
Silicon NPN Darlington Power Transistor
= 1000(Min) @I
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
= 100V(Min)
C
=25℃
PARAMETER
C
= 10A
a
=25
℃)
-55~150
VALUE
150
100
150
10
40
8
1
UNIT
℃
℃
W
V
V
V
A
A
isc
Product Specification
2SD1500
Related parts for 2sd1500
2sd1500 Summary of contents
Page 1
... Emitter-Base Voltage EBO I Collector Current-Continuous C I Base Current-Continuous B B Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website:www.iscsemi.cn =25 ℃) a VALUE UNIT 150 V 100 ℃ 150 ℃ -55~150 isc Product Specification 2SD1500 ...
Page 2
... 8V 10A 10A 50V 1MHz E CB test 25mA 5Ω 50V 2SD1500 MIN TYP. MAX UNIT 100 V 1.5 V 2.0 V μ 1000 3 MHz μs 0.6 μs 3.0 μs 1.0 ...