Power Transistors
2SD1750, 2SD1750A
Silicon NPN triple diffusion planar type darlington
For midium speed power switching
Complementary to 2SB1180 and 2SB1180A
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2004
• High forward current transfer ratio h
• High-speed switching
• I type package enabling direct soldering of the radiating fin to the
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SD1750
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Forward current transfer ratio
Turn-on time
Storage time
Fall time
printed circuit board, etc. of small electronic equipment
2. * : Rank classification
Parameter
Rank
Parameter
h
FE1
2 000 to 5 000 4 000 to 10 000
2SD1750
2SD1750A
2SD1750A
T
a
2SD1750
2SD1750A
2SD1750
2SD1750A
= 25°C
Q
FE
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
T
V
V
I
P
h
I
T
V
CBO
CEO
EBO
C
CP
I
I
stg
h
C
CE(sat)
BE(sat)
C
FE1
CBO
t
j
EBO
t
f
CEO
FE2
stg
t
on
= 25°C
T
f
*
P
−55 to +150
Rating
I
V
V
V
V
V
I
I
V
I
V
C
C
C
C
150
CB
CB
EB
CE
CE
CE
CC
1.3
60
80
60
80
12
15
= 30 mA, I
= 4 A, I
= 4 A, I
= 4 A, I
7
8
SJD00222CED
= 7 V, I
= 3 V, I
= 3 V, I
= 10 V, I
= 60 V, I
= 80 V, I
= −50 V
B
B
B1
= 8 mA
= 8 mA
C
C
C
= 8 mA, I
Conditions
Unit
B
C
E
E
= 0
= 4 A
= 8 A
°C
°C
W
V
V
V
A
A
= 0
= 0
= 0
= 0.5 A, f = 1 MHz
B2
= −8 mA
Note) Self-supported type package is also prepared.
Internal Connection
1
B
2 000
7.0
4.6
Min
500
60
80
2
±0.3
±0.4
3
2.3
1.1
0.75
3.0
2.0
±0.2
Typ
0.5
4.0
1.0
20
±0.1
±0.2
±0.2
±0.1
0.4
10 000
Max
C
E
±0.1
100
100
3.5
1.5
2.0
2
±0.2
I-G1 Package
1: Base
2: Collector
3: Emitter
Unit : mm
0˚ to 0.15˚
0.9
0˚ to 0.15˚
MHz
Unit
±0.1
mA
µA
µs
µs
µs
V
V
V
1