2sd1857 Unisonic Technologies, 2sd1857 Datasheet - Page 2

• Manufacturer Part Number: 2sd1857
• Description: Npn Silicon Transistor
• Manufacturer: Unisonic Technologies

2SD1857
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Note : Measured using pulse current.
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Collector Current
Collector Current
Junction Temperature
Storage Temperature
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
ABSOLUTE MAXIMUM RATING
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANGE
RANK
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
FE
SYMBOL
V
BV
BV
BV
82-180
CE(SAT)
I
I
h
C
CBO
EBO
f
FE
P
CBO
CEO
EBO
T
ob
(Ta=25 ℃ )
I
I
I
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
CB
=50µA
=1mA
=50µA
=/I
(Ta=25 ℃ )
=4V
=100V
=5V, I
=5V, I
=10V, I
B
=1A/0.1A(Note)
TEST CONDITIONS
C
E
= -0.1A, f=30MHz.
=0.1A
E
=0A, f=1MHz(Note)
SYMBOL
V
V
V
T
P
I
T
CBO
CEO
EBO
I
CP
STG
120-270
C
C
J
Q
NPN SILICON TRANSISTOR
MIN
120
120
82
-55 ~ +150
5
RATINGS
+150
120
120
5
1
2
3
TYP
80
20
180-390
MAX
390
R
0.4
1
1
QW-R201-057,C
UNIT
UNIT
MHz
2 of 2
℃
℃
µA
µA
pF
W
V
V
V
A
A
V
V
V
V