2sd1816l-q-tn3-e-t Unisonic Technologies, 2sd1816l-q-tn3-e-t Datasheet - Page 2

• Manufacturer Part Number: 2sd1816l-q-tn3-e-t
• Description: Npn Epitaxial Planar Transistor
• Manufacturer: Unisonic Technologies

2SD1816
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Note1: Duty=1/2, Pw=20ms
Note2: When mounted on a 40×40×0.7mm ceramic board
Note3: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Turn-on Time
Storage Time
Fall Time
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
CLASSIFICATION of h
TEST CIRCUIT
RANGE
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANK
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Duty Cycle≒1%
PW=20μS
PARAMETER
INPUT
100 - 200
R
FE1
SYMBOL
V
V
50
BV
BV
BV
Unit (resistance:Ω, capacitance: F)
BE(SAT)
CE(SAT)
h
h
I
I
t
C
t
CBO
EBO
STG
FE1
FE2
f
ON
t
CBO
CEO
EBO
T
F
ob
PULSE(Note 1)
DC
Ic=10, I
(Ta =25℃ )
-5V
(Ta=25°C, unless otherwise specified)
V
I
I
I
I
I
V
V
V
V
V
V
See test circuit
See test circuit
See test circuit
C
C
E
C
C
R
CB
EB
CE
CE
CE
CB
140 - 280
=10µA, I
=10µA, I
=1mA, R
= 2A, I
= 2A, I
= 4V, I
= 100 V, I
= 5V, I
=5V, I
=10V, I
=10V, I
B1
100µ
S
I
= -10, I
R
NPN EPITAXIAL PLANAR TRANSISTOR
I
B2
B 1
B
+
TEST CONDITIONS
B
B
=0.2A
C
=0.2A
C
C
C
E
B
C
E
SYMBOL
=0
=0
= 3A
=∞
=0
= 0.5A
=0A, f =1MHz
=0.5A
B2
E
V
V
V
T
=2A
P
=0
T
CBO
CEO
EBO
I
STG
C
D
J
470 µ
+
200 - 400
(T
C
50V
=25°C) 20 (Note 2)
T
-40 ~ +150
RATINGS
+150
120
100
OUTPUT
6
4
8
1
MIN
120
100
70
40
6
TYP
150
180
100
900
0.9
40
50
70 -140
MAX UNIT
Q
400
400
QW-R209-011,B
1.2
1
1
UNIT
°C
°C
W
W
2 of 4
V
V
V
A
A
MHz
mV
µA
µA
pF
ns
ns
ns
V
V
V
V