auirls3036-7p International Rectifier Corp., auirls3036-7p Datasheet - Page 2

• Manufacturer Part Number: auirls3036-7p
• Description: Hexfetpower Mosfet
• Manufacturer: International Rectifier Corp.

Notes:
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‚
ƒ
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Static Electrical Characteristics @ T
V
R
V
gfs
R
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
V
(BR)DSS
GS(th)
SD
DS(on)
G(int)
iss
oss
rss
oss
oss
g
gs
gd
sync
rr
2
Symbol
Symbol
Symbol
(BR)DSS
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
R
above this value .
I
SD
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
G
= 25 , I
180A, di/dt
/ T
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 180A, V
, starting T
1070A/μs, V
Parameter
GS
J
=10V. Part not recommended for use
Ãe
= 25°C, L = 0.018mH
DD
Parameter
Parameter
V
(BR)DSS
J
, T
g
= 25°C (unless otherwise specified)
- Q
J
J
gd
= 25°C (unless otherwise specified)
175°C.
)
h
Ã
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.059 –––
–––
–––
390
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 11270 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
–––
…
†
‡
ˆ
‰
Š
60
Pulse width
C
C
C
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
oss
oss
oss
oss
JC
1025
1460
1630
–––
–––
–––
–––
–––
–––
–––
110
540
170
520
–––
–––
–––
140
160
1.5
1.7
1.9
4.6
33
53
57
81
89
57
60
while V
while V
eff. (TR) is a fixed capacitance that gives the same charging time as
eff. (ER) is a fixed capacitance that gives the same energy as
1000
-100
–––
–––
–––
250
100
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
300
–––
–––
–––
–––
–––
1.9
2.2
2.5
1.3
DS
DS
20
400μs; duty cycle
is rising from 0 to 80% V
is rising from 0 to 80% V
V/°C
m
μA
nA
nC
pF
nC
ns
ns
A
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 180A
= 180A, V
= 180A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 2.1
= V
= 10V, I
= 60V, V
= 60V, V
= 30V
= 50V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V
= 39V
= 4.5V
= 0V
= 0V, V
= 0V, V
GS
2%.
, I
D
g
g
D
S
DS
DS
D
D
DS
DSS
DSS
= 250μA
D
GS
GS
= 180A, V
= 250μA
= 180A
= 180A
= 150A
= 0V to 48V
= 0V to 48V
Conditions
Conditions
Conditions
=0V, V
.
.
= 0V
= 0V, T
V
I
di/dt = 100A/μs
F
R
= 180A
D
= 51V,
g
GS
= 5mA
g
J
GS
= 125°C
= 4.5V
= 0V
h
www.irf.com
G
d
g
g
S
D