auirfl014n International Rectifier Corp., auirfl014n Datasheet - Page 2

• Manufacturer Part Number: auirfl014n
• Description: Hexfet Power Mosfet
• Manufacturer: International Rectifier Corp.

AUIRFL014N
Static Electrical Characteristics @ T
V
ΔV
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q

‚
ƒ
„
…
†
Diode Characteristics
Notes:
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
2
(BR)DSS
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
V
I
Pulse width ≤ 300μs; duty cycle ≤ 2%.
When mounted on FR-4 board using minimum recommended footprint.
When mounted on 1 inch square copper board, for comparison with other SMD devices.
SD
DD
≤ 1.7A, di/dt ≤ 250A/μs, V
= 25V, starting T
/ΔT
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
J
= 25°C, L = 8.2mH, R
DD
Parameter
™
≤ V
(BR)DSS
, T
J
G
J
= 25°C (unless otherwise specified)
= 25Ω, I
≤ 150°C
J
= 25°C (unless otherwise specified)
AS
= 3.4A. (See Figure 12)
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
1.6
55
0.054
Typ.
Typ.
–––
–––
–––
–––
–––
–––
–––
–––
–––
190
–––
–––
7.0
1.2
3.3
6.6
7.1
3.3
12
72
33
41
64
Max. Units
Max. Units
0.16
-100
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
4.0
1.0
1.8
5.0
1.3
1.0
25
11
15
61
95
V/°C
μA
nA
nC
nC
ns
pF
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig.5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= 1.7A
= 1.7A
= 25°C, I
= 25°C, I
= 6.0 Ω
=16 Ω, See Fig.10
= V
= 25V, I
= 44V, V
= 44V, V
= 44V
= 28V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig 6 and 9
= 0V
GS
, I
D
D
S
F
D
D
= 250μA
GS
GS
= 250μA
= 1.7A, V
= 1.7A
= 0.85A
=1.9A
= 0V
= 0V, T
f
Conditions
Conditions
D
f
= 1mA
GS
J
f
= 150°C
= 0V
f
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