auirf2805l International Rectifier Corp., auirf2805l Datasheet

auirf2805l

Manufacturer Part Number

auirf2805l

Description

Hexfet Power Mosfet

Manufacturer

International Rectifier Corp.

Datasheet

1.AUIRF2805L.pdf (14 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRF2805L

Manufacturer:

Quantity:

12 500

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Features

Description

Specifically designed for Automotive applications, this

Stripe Planar design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve low

on-resistance per silicon area. This benefit combined with

the fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliable device for use in Automotive and a wide variety of

other applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still

air conditions. Ambient temperature (T

www.irf.com

dv/dt

Thermal Resistance

HEXFET

*Qualification standards can be found at http://www.irf.com/

STG

θJC

θJA

@ T

Advanced Planar Technology

Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(Tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested value

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB mounted)

) is 25°C, unless otherwise specified.

Parameter

AUTOMOTIVE GRADE

@ 10V

Gate

AUIRF2805S

Typ.

–––

300 (1.6mm from case )

See Fig.12a,12b, 15,16

Pak

HEXFET

-55 to + 175

Max.

135

700

200

380

920

±20

1.3

2.0

(BR)DSS

Drain

DS(on)

AUIRF2805L

AUIRF2805S

AUIRF2805L

TO-262

Max.

0.75

Power MOSFET

max.

Source

PD - 96383A

4.7mΩ

135A

55V

Units

W/°C

°C/W

V/ns

°C

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