auirf1018es International Rectifier Corp., auirf1018es Datasheet - Page 3

• Manufacturer Part Number: auirf1018es
• Description: Hexfet Power Mosfet
• Manufacturer: International Rectifier Corp.

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
1000
4000
3000
2000
1000
1000
100
100
0.1
10
10
0
1
1
0.1
Fig 3. Typical Transfer Characteristics
2
1
Fig 1. Typical Output Characteristics
T J = 175°C
3
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4
C oss
C iss
C rss
T J = 25°C
1
5
4.5V
V DS = 25V
≤60μs PULSE WIDTH
f = 1 MHZ
10
≤60μs PULSE WIDTH
Tj = 25°C
6
10
TOP
BOTTOM
7
8
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
100
9
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
2.5
2.0
1.5
1.0
0.5
16
12
10
8
4
0
1
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
0
I D = 47A
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I D = 47A
V GS = 10V
10
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
20
V DS = 48V
V DS = 30V
V DS = 12V
1
30
≤60μs PULSE WIDTH
Tj = 175°C
4.5V
40
10
50
60
100
3