auirf7647s2 International Rectifier Corp., auirf7647s2 Datasheet

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auirf7647s2

Manufacturer Part Number
auirf7647s2
Description
Directfetpower Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
www.irf.com
Description
The AUIRF7647S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance
and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage
ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in Automotive
Class D audio amplifier systems.
Applicable DirectFET Outline and Substrate Outline 
HEXFET
V
V
I
I
I
I
P
P
E
E
I
E
T
T
T
R
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
D
DM
AR
P
J
STG
DS
GS
D
D
AS
AS(tested)
AR
θJA
θJA
θJA
θJ-Can
θJ-PCB
@ T
@ T
@ T
@T
@T
SB
C
C
A
C
A
= 25°C
®
= 25°C
= 100°C
= 25°C
= 25°C
is a registered trademark of International Rectifier.
SC
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Tested Value)
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
l
e
Ãg
e
j
k
Parameter
Parameter
AUTOMOTIVE GRADE
GS
GS
GS
M2
g
@ 10V
@ 10V
@ 10V
(Silicon Limited)
(Silicon Limited)
(Silicon Limited)
M4
h
h
e
D
Typ.
See Fig. 18a,18b,16,17
12.5
–––
–––
V
R
R
Q
1.4
DirectFET™ Power MOSFET ‚
20
AUIRF7647S2TR1
G
(BR)DSS
L4
DS(on)
G (typical)
g (typical)
SC
AUIRF7647S2TR
-55 to + 175
Max.
S
S
± 20
0.27
100
270
5.9
2.5
24
17
95
41
45
67
typ.
max.
L6
D
Max.
–––
–––
–––
3.7
60
DirectFET™ ISOMETRIC
L8
26mΩ
31mΩ
14nC
100V
1.6Ω
Units
Units
°C/W
W/°C
07/13/2010
mJ
mJ
°C
W
V
A
A
1

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auirf7647s2 Summary of contents

Page 1

... SC Description The AUIRF7647S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech- niques, when application note AN-1035 is followed regarding the manufacturing methods and processes ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 125° ...

Page 5

50µ 250µA 3 1.0mA 2 1.0A 2.0 1.5 1.0 -75 -50 - 100 125 150 175 200 T ...

Page 6

OPERATION IN THIS AREA LIMITED (on) 100 100µsec 10 1msec 10msec 25° 175°C Single Pulse 0 100 Drain-to-Source Voltage (V) Fig 13. Maximum Safe ...

Page 7

TOP Single Pulse BOTTOM 1.0% Duty Cycle 14A 100 Starting Junction Temperature (°C) Fig 17. Maximum Avalanche Energy vs. Temperature ...

Page 8

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations G=GATE D=DRAIN S=SOURCE www.irf.com ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations ™ Part Marking www.irf.com DIMENSIONS METRIC CODE MIN A 4.75 B 3.70 C 2.75 D 0.35 E 0.58 F 0.78 0. 0.63 J 0.38 ...

Page 10

... Tape & Reel Dimension (Showing component orientation NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as AUIRF7647S2TR). For 1000 parts on 7" reel, order AUIRF7647S2TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) METRIC IMPERIAL MIN CODE MIN MAX MAX MIN A 330 ...

Page 11

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or ...

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