auirfs3207z International Rectifier Corp., auirfs3207z Datasheet - Page 2

• Manufacturer Part Number: auirfs3207z
• Description: Hexfetpower Mosfet
• Manufacturer: International Rectifier Corp.

Notes:

‚
ƒ
ΔV
Static Electrical Characteristics @ T
V
R
V
gfs
R
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G(int)
iss
oss
rss
oss
oss
g
gs
gd
sync
rr
Calculated continuous current based on maximum allowable
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
R
above this value.
2
(BR)DSS
junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
G
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
= 25Ω, I
/ΔT
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 102A, V
, starting T
Parameter
GS
J
=10V. Part not recommended for use
= 25°C, L = 0.033mH
d
Parameter
Parameter
J
g
= 25°C (unless otherwise specified)
- Q
J
gd
= 25°C (unless otherwise specified)
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
„
…
†
‡
ˆ
‰
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.091 –––
–––
280
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
75
I
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C
as C
C
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application
note #AN-994.
R
SD
oss
oss
oss
θ
is measured at T
≤ 75A, di/dt ≤ 1730A/μs, V
oss
while V
eff. (TR) is a fixed capacitance that gives the same charging time
eff. (ER) is a fixed capacitance that gives the same energy as
6920
0.80
–––
–––
–––
–––
–––
–––
–––
120
600
270
770
960
–––
–––
–––
3.3
2.4
27
33
87
20
68
55
68
36
41
50
67
while V
DS
170
-100
–––
–––
–––
250
100
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
670
100
–––
4.1
4.0
1.3
20
54
62
75
is rising from 0 to 80% V
DS
™
is rising from 0 to 80% V
J
V/°C
mΩ
approximately 90°C.
nC
nC
μA
nA
pF
ns
ns
Ω
V
V
S
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
DD
J
J
J
J
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 75A
= 75A, V
= 75A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 2.7Ω
≤ V
= 0V, I
= 10V, I
= V
= 50V, I
= 75V, V
= 75V, V
= 20V
= -20V
= 38V
= 10V
= 49V
= 10V
= 0V
= 50V
= 0V, V
= 0V, V
(BR)DSS
GS
, I
DSS
D
g
g
DS
D
S
DS
DS
D
D
= 250μA
DSS
GS
GS
, T
.
= 75A, V
= 150μA
= 75A
=0V, V
= 75A
= 0V to 60V
= 0V to 60V
Conditions
Conditions
Conditions
J
= 0V
= 0V, T
.
≤ 175°C.
V
I
di/dt = 100A/μs
F
R
= 75A
g
D
GS
= 64V,
GS
= 5mA
J
= 10V
= 125°C
= 0V
i
h
www.irf.com
d
G
g
g
S
D