auirfr2405trr International Rectifier Corp., auirfr2405trr Datasheet - Page 2

• Manufacturer Part Number: auirfr2405trr
• Description: Hexfet Power Mosfet
• Manufacturer: International Rectifier Corp.

 Repetitive rating; pulse width limited by
‚ Starting T
ƒ I
„ Pulse width ≤ 300μs; duty cycle ≤ 2%.
Static Electrical Characteristics @ T
V
ΔV
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
R
2
(BR)DSS
T
max. junction temperature.
SD
J
G
eff.
≤ 175°C.
= 25Ω, I
≤ 34A, di/dt ≤ 190A/μs, V
/ΔT
J
J
= 25°C, L = 0.22mH
AS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 34A.
Parameter
Ù
Parameter
Parameter
DD
≤ V
(BR)DSS
,
J
= 25°C (unless otherwise specified)
… C
† Calculated continuous current based on maximum allowable
‡ When mounted on 1" square PCB (FR-4 or G-10 Material) .
ˆ R
J
= 25°C (unless otherwise specified)
as C
junction temperature. Package limitation current is 30A.
For recommended footprint and soldering techniques refer to
application note #AN-994.
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
oss
θ
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
is measured at T
55
30
oss
eff. is a fixed capacitance that gives the same charging time
while V
0.052
2430
2040
11.8
–––
–––
–––
–––
–––
–––
–––
130
470
100
350
350
–––
–––
–––
170
4.5
7.5
70
16
19
15
55
78
62
DS
-200
56
is rising from 0 to 80% V
–––
–––
–––
250
200
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
220
260
4.0
1.3
16
20
23
29
93
h
J
of approximately 90°C.
V/°C
mΩ
μA
nA
nC
nH
nC
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
GS
GS
GS
= 34A
= 34A
= 25°C, I
= 25°C, I
= 6.8Ω
= 10Ω
= V
= 25V, I
= 55V, V
= 44V, V
= 44V
= 28V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
f
DSS
D
f
Conditions
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250μA
GS
GS
= 250μA
= 34A
= 34A, V
= 34A
= 34A
.
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
f
www.irf.com
f
D
f
= 1mA
GS
G
J
= 150°C
G
= 0V
f
S
D
S
D