m24l416256d Elite Semiconductor Memory Technology Inc., m24l416256d Datasheet - Page 6
![no-image](/images/no-image-200.jpg)
m24l416256d
Manufacturer Part Number
m24l416256d
Description
4-mbit 256k X 16 Pseudo Static Ram
Manufacturer
Elite Semiconductor Memory Technology Inc.
Datasheet
1.M24L416256D.pdf
(15 pages)
ESMT
Switching Characteristics (Over the Operating Range)[10] (continued)
t
t
t
t
t
t
Switching Waveforms
Read Cycle 1 (Address Transition Controlled)[14, 15, 16]
Read Cycle 2 ( OE Controlled)[14, 16]
Notes:
15.Device is continuously selected. OE , CE = V
16. WE is HIGH for Read Cycle.
Elite Semiconductor Memory Technology Inc.
PWE
BW
SD
HD
HZWE
LZWE
Prameter
Data Set-up to Write End
Data Hold from Write End
BLE / BHE LOW to Write End
WE Pulse Width
WE LOW to High Z[11, 12]
WE HIGH to Low Z[11, 12]
Description
IL
.
Min.
40
50
25
0
5
–55
Max.
25
Min.
40
50
25
0
5
–60
Publication Date: Jul. 2008
Max.
Revision: 1.5
25
M24L416256DA
Min.
45
55
25
0
5
–70
Max.
25
6/15
Unit
ns
ns
ns
ns
ns
ns