ssm3j35fs TOSHIBA Semiconductor CORPORATION, ssm3j35fs Datasheet - Page 3

• Manufacturer Part Number: ssm3j35fs
• Description: Toshiba Field-effect Transistor Silicon P-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

-200
-100
-250
-150
-50
0
15
10
20
15
10
20
5
0
5
0
-1
0
0
-2.5 V
-1.5 V
V GS = -1.2 V
-4 V
Drain–source voltage V
Gate–source voltage V
-2
-0.5
Drain current I
R
DS (ON)
-10
R
DS (ON)
I
-10V
-4
D
– V
– V
-1
DS
– I
-4V
GS
D
D
-6
-100
25℃
Common Source
I D = -5 mA
(mA)
Common Source
Ta = 25°C
DS
GS
Common Source
Ta = 25°C
-1.5
-2.5V
V GS =-1.2V
(V)
-8
(V)
Ta=100℃
-25℃
-1.8V
-1.5V
-1000
-10
-2
3
-1000
-0.01
-100
10
15
-0.1
-10
20
15
10
5
0
-1
5
0
−50
0
0
Common Source
V DS = -3V
Common Source
25°C
Ta = 100°C
Gate–source voltage V
Gate–source voltage V
Ambient temperature Ta (°C)
-2
R
0
DS (ON)
−25°C
-1
R
-4
DS (ON)
I
D
– V
– V
50
GS
GS
– Ta
V GS =−1.2 V，ID=-2mA
-6
Common Source
I D = -50 mA
-2
GS
25℃
GS
-2.5 V，-50mA
100
-1.5 V，-5mA
SSM3J35FS
-4V，-50mA
-8
(V)
(V)
Ta=100℃
2009-06-25
-25℃
-10
150
-3