ssm3j108tu TOSHIBA Semiconductor CORPORATION, ssm3j108tu Datasheet - Page 4

• Manufacturer Part Number: ssm3j108tu
• Description: Field Effect Transistor Silicon P-channel Mos Type High Speed Switching Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
10.0
1000
800
600
400
200
1.0
0.1
100
10
-0.01
0
0.1
0
Common Source
VGS=0V
f=1MHz
Ta=25°C
b
a
20
Ambient temperature Ta(°C)
Drain-Source voltage VDS (V)
-25°C
40
25°C
Drain current ID (A)
-0.1
1
|Yfs| - ID
60
C - VDS
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
Ta=85°C
PD - Ta
80 100 120 140 160
Common Source
VDS=-3V
Ta=25°C
-1
10
Ciss
Coss
Crss
-10
100
4
-0.001
1000
1000
-0.01
100
100
-0.1
10
-10
10
1
0.001
-1
1
-0.01
0
ton
Common Source
VGS=0V
Ta=25°C
toff
tf
tr
0.01
0.2
Drain-Source voltage VDS (V)
Ta=85°C
-0.1
0.1
Pulse w idth tw (S)
Drain current ID (A)
IDR - VDS
0.4
t - ID
25°C
Rth - tw
Single pulse
a:Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
1
c
b
a
Common Source
VDD=10V
VGS=0 to 2.5V
Ta=25°C
0.6
SSM3J108TU
-1
10
-25°C
0.8
2007-11-01
100
1000
-10
1