ssm3j15fv TOSHIBA Semiconductor CORPORATION, ssm3j15fv Datasheet - Page 2

• Manufacturer Part Number: ssm3j15fv
• Description: Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Precaution
this product. For normal switching operation, V
voltage than V
(The relationship can be established as follows: V
V
Please take this into consideration when using the device.
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
th
(a) Test circuit
can be expressed as the voltage between gate and source when the low operating current value is I
−
5V
0
V
Duty < = 1%
V
(Z
Common Source
Ta = 25°C
th.
DD
IN
out
10 μs
Characteristic
: t
= −5 V
r
= 50 Ω)
, t
f
< 5 ns
Turn-on time
Turn-off time
IN
(Ta = 25°C)
R
V
OUT
L
DD
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
GS (on)
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
iss
rss
th
fs
GS (off)
⎪
requires a higher voltage than V
V
I
V
V
V
I
I
V
V
V
(b) V
(c) V
D
D
D
< V
GS
DS
DS
DS
DS
DD
GS
= −0.1 mA, V
= −10 mA, V
= −1 mA, V
2
th
= ±16 V, V
= −30 V, V
= −3 V, I
= −3 V, I
= −3 V, V
= −5 V, I
= 0~−5 V
OUT
IN
< V
Test Condition
GS (on)
D
D
D
GS
GS
GS
= −0.1 mA
= −10 mA
DS
GS
= −10 mA,
GS
V
= −2.5 V
= 0, f = 1 MHz
V
= −4 V
DD
= 0
= 0
= 0
DS (ON)
)
−5 V
0 V
th
t
on
and V
10%
MIN.
−1.1
−30
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
r
90%
10%
GS (off)
TYP.
175
9.1
3.5
8.6
14
65
⎯
⎯
⎯
⎯
⎯
8
SSM3J15FV
t
requires a lower
90%
off
D = -
2007-11-01
MAX.
−1.7
±1
−1
12
32
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
f
100 μA for
UNIT
mS
μA
μA
pF
pF
pF
ns
Ω
V
V