ssm3k14t TOSHIBA Semiconductor CORPORATION, ssm3k14t Datasheet - Page 3

• Manufacturer Part Number: ssm3k14t
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mosii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
100
80
60
40
20
80
60
40
20
−25
9
8
7
6
5
4
3
2
1
0
0
0
0
Common Source
Ta = 25°C
I D = 2 A
Common Source
10 4.5 4
0
Drain-Source voltage V DS (V)
2
Ambient temperature Ta (°C)
0.5
25
Drain current I D (A)
R
R
DS (ON)
4
DS (ON)
I
50
D
– V
3.3
1
DS
75
– Ta
–I
6
V GS = 4 V
D
V GS = 2.6 V
Common Source
Ta = 25°C
4.5 V
3.0
2.8
100
10 V
V GS = 4 V
1.5
8
4.5 V
10 V
125
150
10
2
3
10000
1000
0.01
100
200
160
120
0.1
2.5
1.5
0.5
10
80
40
−25
1
0
3
2
1
0
0
0
V DS = 5 V
I D = 0.1 mA
Common Source
0
2
Gate-Source voltage V GS (V)
Gate-Source voltage V GS (V)
Ambient temperature Ta (°C)
1
25
Ta = 100°C
R
4
25°C
Ta = 100°C
DS (ON)
−25°C
I
50
V
D
th
– V
2
6
– Ta
GS
– V
75
25
−25°C
GS
8
V DS = 5 V
Common Source
100
Common Source
I D = 2 A
3
10
SSM3K14T
125
2007-11-01
150
12
4