sia911adj Vishay, sia911adj Datasheet

no-image

sia911adj

Manufacturer Part Number
sia911adj
Description
Vishay Siliconix
Manufacturer
Vishay
Datasheet
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 68968
S-82481-Rev. A, 13-Oct-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
- 20
DS
PowerPAK SC-70-6 Dual
2.05 mm
6
D
(V)
1
5
G
2
D
1
4
0.116 at V
0.155 at V
0.205 at V
S
S
1
2
1
h
D
R
ttp://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
G
2
DS(on)
1
2
GS
GS
GS
2.05 mm
D
2
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
3
J
= 150 °C)
Ordering Information: SiA911ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
b, f
Dual P-Channel 20-V (D-S) MOSFET
I
- 4.5
- 4.5
- 4.5
D
Part # Code
(A)
a
a
a
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
4.9 nC
g
Marking Code
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
D G X
X X X
Lot Traceability
and Date Code
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Load Switch, PA Switch and Battery Switch for Portable
Symbol
Symbol
T
R
R
SC-70 Package
- Small Footprint Area
- Low On-Resistance
Devices
J
V
V
I
P
, T
DM
I
I
thJC
thJA
DS
GS
D
S
D
stg
®
Power MOSFET
Typical
55
15
G
1
- 55 to 150
P-Channel MOSFET
- 3.2
- 2.6
- 1.5
1.8
1.1
Limit
- 4.5
- 4.5
- 4.5
- 20
260
± 8
6.5
4.2
- 8
b, c
b, c
b, c
b, c
b, c
a
a
a
Maximum
S
D
1
1
70
19
Vishay Siliconix
SiA911ADJ
G
2
®
P-Channel MOSFET
www.vishay.com
S
D
°C/W
Unit
Unit
2
2
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for sia911adj

sia911adj Summary of contents

Page 1

... 2. Ordering Information: SiA911ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SiA911ADJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 0.5 0.0 1.5 2.0 700 600 500 400 = 2.5 V 300 200 = 4.5 V 100 1.6 1.4 1 1.0 0.8 0 SiA911ADJ Vishay Siliconix ° 125 ° 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... SiA911ADJ Vishay Siliconix TYPICAL CHARACTERISTICS 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0.4 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product = 25 °C, unless otherwise noted A 0.5 0.4 0.3 0 °C J 0.1 0.0 0.8 1.0 1 250 µ 100 ...

Page 5

... S-82481-Rev. A, 13-Oct-08 New Product = 25 °C, unless otherwise noted 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiA911ADJ Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 ...

Page 6

... SiA911ADJ Vishay Siliconix TYPICAL CHARACTERISTICS T 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords