ssm6l14fe TOSHIBA Semiconductor CORPORATION, ssm6l14fe Datasheet - Page 2

• Manufacturer Part Number: ssm6l14fe
• Description: Toshiba Field-effect Transistor Silicon N / P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1 Electrical Characteristics
Q2 Electrical Characteristics
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Switching time
Drain-source forward voltage
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate−source charge
Gate−drain charge
Switching time
Drain-source forward voltage
Note 2: Pulse test
Characteristics
Characteristics
Turn-on time
Turn-off time
Turn-on time
Turn-off time
V
V
V
V
(Ta = 25°C)
(Ta = 25°C)
R
R
Symbol
Symbol
(BR) DSS
(BR) DSX
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
V
V
I
I
C
I
I
C
C
|Y
C
|Y
C
C
Q
Q
Q
Q
DSS
GSS
DSS
GSS
V
V
Q
t
t
Q
t
t
DSF
DSF
oss
on
off
oss
on
off
rss
rss
iss
iss
gs
gd
gs
gd
th
fs
th
fs
g
g
|
|
I
I
V
V
V
V
I
I
I
I
V
V
V
V
V
I
I
I
V
V
V
V
I
I
I
I
V
V
V
V
V
I
D
D
D
D
D
D
D
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
DS
GS
DD
GS
DS
GS
DS
DS
DS
DS
GS
DD
GS
= 1 mA, V
= 1 mA, V
= 500 mA, V
= 400 mA, V
= 250 mA, V
= 150 mA, V
= -0.8 A, V
= -1 mA, V
= -1 mA, V
= -400 mA, V
= -200 mA, V
= -100 mA, V
= -50 mA, V
= 720 mA, V
= 20 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10 V, I
= 10 V, I
= 0 to 2.5 V, R
= -20 V, V
= -3 V, I
= -3 V, I
= -10 V, V
= -10 V, I
= -10 V, I
= 0 to -2.5 V, R
= ±8 V, V
= 4.5 V
= ±8 V, V
= -4.5 V
2
Test Conditions
Test Conditions
D
D
GS
GS
D
D
GS
GS
D
D
GS
= 1 mA
= 500 mA
DS
D
GS
DS
GS
DS
GS
GS
= -1 mA
= -400 mA
GS
GS
GS
GS
GS
GS
= 200 mA
= 0.8 A
GS
GS
GS
= 0 V
= - 10 V
= -100 mA
= 0 V
= 8 V
= -720 mA
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= -1.5 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 4.5 V
= 2.5 V
= 1.8 V
= 1.5 V
= -4.5 V (Note2)
= -2.5 V (Note2)
= -1.8 V (Note2)
G
G
= 4.7 Ω
= 50 Ω
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note2)
(Note2)
(Note2)
0.35
1.05
Min
20
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
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⎯
⎯
-0.3
850
Min
-20
-12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
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⎯
-0.84
Typ.
2.00
1.02
0.98
185
245
310
370
2.1
90
21
15
18
50
Typ.
0.25
0.34
0.44
0.55
1.76
1.22
0.54
0.85
⎯
⎯
⎯
⎯
⎯
110
SSM6L14FE
28
20
11
38
⎯
⎯
⎯
⎯
⎯
⎯
2010-03-25
Max
240
330
450
600
-1.2
1.0
0.30
0.44
0.67
1.04
±1
Max
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1.0
-10
1.2
1
±1
⎯
⎯
⎯
⎯
⎯
⎯
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Unit
mΩ
Unit
μA
μA
nC
mS
pF
ns
μA
μA
nC
pF
ns
V
V
S
V
Ω
V
V
V