ssm6p41fe TOSHIBA Semiconductor CORPORATION, ssm6p41fe Datasheet - Page 2

• Manufacturer Part Number: ssm6p41fe
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Drain-source forward voltage
Note2: Pulse test
−
2.5V
0
Characteristics
V
R
Duty ≤ 1%
V
(Z
Common Source
Ta = 25°C
(a) Test circuit
DD
IN
G
out
10 μs
: t
= 50 Ω
= −10 V
r
= 50 Ω)
, t
f
< 5 ns
Turn-on time
Turn-off time
IN
(Ta = 25°C) (Q1, Q2 Common)
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
I
C
|Y
C
C
GSS
DSS
V
Q
Q
t
Q
t
DSF
on
off
oss
rss
R
iss
th
fs
gs
gd
V
g
OUT
L
|
DD
I
I
V
V
V
V
I
I
I
I
V
V
V
V
V
I
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
DS
GS
DD
GS
= -1 mA, V
= -1 mA, V
= -400 mA, V
= -200 mA, V
= -100 mA, V
= -50 mA, V
= 720 mA, V
= -20 V, V
= -3 V, I
= -3 V, I
= -10 V, V
= -10 V, I
= ±8 V, V
= -4.5 V
= -10 V, I
= 0 to -2.5 V, R
Test Conditions
2
D
D
GS
GS
(b) V
(c) V
DS
D
DS
GS
GS
= -1 mA
= -400 mA
GS
GS
GS
GS
GS
= -100 mA
= 0 V
= 8 V
= -720 mA
= 0 V
= -1.5 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= -4.5 V
= -2.5 V
= -1.8 V
G
IN
OUT
= 50 Ω
V
V
DD
DS (ON)
−2.5 V
(Note2)
0 V
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
Min
-0.3
850
-20
-12
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t
on
10%
t
r
90%
10%
Typ.
0.25
0.34
0.44
0.55
1.76
1.22
0.54
0.85
110
28
20
11
38
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SSM6P41FE
t
90%
off
Max
0.30
0.44
0.67
1.04
-1.0
-10
1.2
±1
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2009-06-25
t
f
Unit
mS
μA
μA
nC
pF
ns
V
V
Ω
V