ssm6p15fe TOSHIBA Semiconductor CORPORATION, ssm6p15fe Datasheet - Page 3

• Manufacturer Part Number: ssm6p15fe
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

-250
-200
-150
-100
-50
40
30
20
10
30
20
10
0
0
0
-25
-1
0
Common Source
Common Source
Ta=25°C
0
Drain-Source Voltage VDS(V)
-0.5
Ambient temperature Ta(°C)
25
Drain Current ID(mA)
-10
VGS=-2.5V
RDS(ON) - ID
RDS(ON) - Ta
VGS=-2.5V,ID=-1mA
ID - VDS
50
-1
-10
75
Common Source
Ta=25°C
-4V,-10mA
-4V
-100
-7
100
-1.5
VGS=-2.3V
-5
125
-2.7
-2.5
-3.3
-3.0
-4
-1000
150
-2
3
-1000
-0.01
-100
-0.1
-10
20
18
16
14
12
10
-1.8
-1.6
-1.4
-1.2
-0.8
-0.6
-0.4
-0.2
-1
8
6
4
2
0
-2
-1
0
0
-25
0
Common Source
VDS=-3V
25°C
0
-2
-1
Ta=100°C
Gate-Source Voltage VGS (V)
Gate-Source Voltage VGS(V)
25
Ambient temperature Ta(°C)
RDS(ON) - VGS
-4
ID - VGS
-2
Vth - Ta
50
-25°C
75
Ta=100°C
-6
-3
Common Source
ID=-0.1mA
VDS=-3V
SSM6P15FE
Source Common
ID= -1mA
100
2007-11-01
-8
-4
-25°C
125
25°
150
-10
-5