tp2150b Tripath Technology Inc., tp2150b Datasheet - Page 9

• Manufacturer Part Number: tp2150b
• Description: Dual High Side And Low Side Mosfet Driver
• Manufacturer: Tripath Technology Inc.

External Components Description
Components
D
C
C
R
C
R
C
R
C
R
L
C
9
O
B
B
BAUX
B
S
S
HBR
G
Z
Z
O
Description
Bootstrap diode. This diode charges up the bootstrap capacitors when the output is
low (at VNN) to drive the high side gate circuitry. A fast or ultra fast recovery diode
is recommended for the bootstrap circuitry. In addition, the bootstrap diode must be
able to sustain the entire VPP-VNN voltage. Thus, for most applications, a 150V (or
greater) diode should be used.
High frequency bootstrap capacitor, which filters the high side gate drive supply.
This capacitor must be located as close to VBOOT1 (pin 57 of the TP2150B) or
VBOOT2 (pin 27 of the TP2150B) for reliable operation. The “negative” side of C
should be connected directly to the HO1COM (pin 47 of the TP2150B) or HO2COM
(pin 37 of the TP2150B). Please refer to the Application / Test Circuit.
Bulk bootstrap capacitor that supplements C
in a reduction in the average switching frequency.
Bootstrap resistor that limits C
(bootstrap supply charging).
Supply decoupling for the power supply pins. For optimum performance, these
components should be located close to the TP2150B and returned to ground.
Over-current sense resistor. Please refer to the section, Setting the Over-current
Threshold, in the Application Information for a discussion of how to choose the value
of R
Supply decoupling for the high current Half-bridge supply pins. These components
must be located as close to the output MOSFETs as possible to minimize output
ringing which causes power supply overshoot. By reducing overshoot, these
capacitors maximize both the TP2150B and output MOSFET reliability. These
capacitors should have good high frequency performance including low ESR and
low ESL. In addition, the capacitor rating must be twice the maximum VPP voltage.
Panasonic EB capacitors are ideal for the bulk storage (nominally 33uF) due to their
high ripple current and high frequency design.
Gate resistor, which is used to control the MOSFET rise/ fall times. This resistor
serves to dampen the parasitics at the MOSFET gates, which, in turn, minimizes
ringing and output overshoots. The typical power rating is 1/2 watt.
Zobel capacitor, which in conjunction with R
frequencies. Use a high quality film capacitor capable of sustaining the ripple current
caused by the switching outputs.
Zobel resistor, which in conjunction with C
frequencies. The combination of R
under both no load conditions or with real world loads, including loudspeakers which
usually exhibit a rising impedance with increasing frequency. Depending on the
program material, the power rating of R
power rating is 2 watts.
Output inductor, which in conjunction with C
waveform into an audio signal. Forms a second order filter with a cutoff frequency
of
Output capacitor, which, in conjunction with L
waveform into an audio signal. Forms a second order low-pass filter with a cutoff
frequency of
a high quality film capacitor capable of sustaining the ripple current caused by the
switching outputs.
f
C
S
to obtain a specific current limit trip point.
1
2 (
S
f
C
L
O
1
C
O
2 (
)
S
and a quality factor of
L
O
C
(Refer to the Application/Test Circuit)
BAUX
O
)
and a quality factor of
charging current during TP2150B power up
Z
T r i p a t h T e c h n o l o g y , I n c . - T e c h n i c a l I n f o r m a t i o n
and C
Z
may need to be adjusted. The typical
Z
Z
, terminates the output filter at high
Z
O
minimizes peaking of the output filter
B
, terminates the output filter at high
, demodulates (filters) the switching
O
during “clipping” events, which result
Q
, demodulates (filters) the switching
R
L
C
TP2150B - MC/ 1.7/06.04
O
Q
L
R
O
L
C
C
O
O
.
L
O
C
O
.
Use
B