dmc3032lsd Diodes, Inc., dmc3032lsd Datasheet - Page 2

• Manufacturer Part Number: dmc3032lsd
• Description: Complementary Pair Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Electrical Characteristics N-CHANNEL – Q1
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
DMC3032LSD
Document number: DS32153 Rev. 1 - 2
20
16
12
8
4
0
0
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
Characteristic
1
V
GS
= 4.5V
V
GS
2
= 8.0V
J
= 25°C
V
GS
3
= 2.0V
V
GS
V
4
GS
= 3.0V
= 2.5V
Symbol
R
5
BV
V
www.diodes.com
DS (ON)
t
t
I
C
I
|Y
V
C
C
Q
Q
D(on)
D(off)
GS(th)
DSS
GSS
R
Q
oss
t
t
SD
DSS
iss
rss
gs
gd
fs
r
f
g
g
|
@T
2 of 8
A
= 25°C unless otherwise specified
Min
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
16
12
404.5
13.92
1.45
51.8
45.1
6.18
2.84
Typ
8
4
0
7.6
0.7
1.5
9.2
1.2
1.8
3.4
23
32
-
-
-
0
V
±100
DS
Max
Fig. 2 Typical Transfer Characteristics
1.0
2.1
1.0
32
46
V
-
-
-
-
-
-
-
-
-
-
-
-
-
= 5V
GS
1
, GATE SOURCE VOLTAGE (V)
Unit
mΩ
T = 85°C
μA
nA
nC
nC
nC
pF
pF
pF
ns
ns
Ω
ns
ns
V
V
S
V
A
T = 125°C
A
T = 150°C
A
2
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
R
D
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
GS
GS
G
= 5.8A
= 3Ω, R
= 30V, V
= V
= 5V, I
= 15V, V
= 0V, V
= 0V, I
= ±20V, V
= 10V, I
= 4.5V, I
= 0V, I
= 10V, V
= 10V, V
T = -55°C
A
GS
Test Condition
DMC3032LSD
T = 25°C
, I
C
A
D
S
L
3
GS
C
C
= 2.6Ω
= 250μA
C
= 7A
= 1A
GS
GS
DS
DS
= 250μA
= 7A
DS
= 5.6A
= 0V, f = 1MHz
= 0V
= 0V,
= 15V,
= 15V,
© Diodes Incorporated
= 0V
May 2010
4